Multiphonon emission process on DX-like centers in indium doped Pb 0.75Sn0.25Te

Romcevic Nebojsa Z.; Khokhlov Dmitri; Stojanovic Dusanka; Romcevic Maja J.; Nikorich Andrey V.

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ROMCEVIC, Nebojsa Z., KHOKHLOV, Dmitri, STOJANOVIC, Dusanka, ROMCEVIC, Maja J., NIKORICH, Andrey V.. Multiphonon emission process on DX-like centers in indium doped Pb 0.75Sn0.25Te. In: Physica Status Solidi C: Conferences, 2003, pp. 776-779. ISSN 1610-1634. DOI: https://doi.org/10.1002/pssc.200306211

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Physica Status Solidi C: Conferences

/ 2003 / ISSN 1610-1634

Multiphonon emission process on DX-like centers in indium doped Pb _0.75Sn_0.25Te

DOI:https://doi.org/10.1002/pssc.200306211

Pag. 776-779

Romcevic Nebojsa Z.¹, Khokhlov Dmitri², Stojanovic Dusanka¹, Romcevic Maja J.³, Nikorich Andrey V.⁴

¹ Institute of Physics Belgrade,
² Lomonosov Moscow State University,
³ Vinca Institute of Nuclear Sciences,
⁴ Institute of Applied Physics, Academy of Sciences of Moldova

Disponibil în IBN: 23 iulie 2023

Rezumat

In this work we present Raman scattering spectra of Pb _0.75Sn_0.25Te + 1.2 at% In. Modes at about 90, 170, 340, 510, and 570 cm^-1 were observed at all temperatures. These modes were discussed in terms of a multiphonon emission (MPE) process on DX-like centers.

Cuvinte-cheie
Energy gap, Fermi level, indium, Magnetoresistance, phonons, photoconductivity, Raman scattering, Semiconductor doping, tin