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 SM ISO690:2012BAKHADIRKHANOV, M., SODIKOV, U., ZIKRILLAEV, N., NORKULOV, N.. Elaboration of Physical Fundamentals of Nanosized Structures on the Basis of S++Mn– – and Se++Mn– – Molecule Formation in Silicon Lattice
. In: Surface Engineering and Applied Electrochemistry, 2007, nr. 5(43), pp. 395-397. ISSN 1068-3755. |
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| Surface Engineering and Applied Electrochemistry | ||||||
| Numărul 5(43) / 2007 / ISSN 1068-3755 /ISSNe 1934-8002 | ||||||
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| Pag. 395-397 | ||||||
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One possible way to create nanosized structures on the basis of the formation of molecules (S Mn– –) and (Se Mn– –) among impurity atoms S, Se, Mn in the silicon lattice is described in the work. Relationships between the concentration of molecules (S Mn– –) and (Se Mn– –) and the concentration of impurity atoms are established.
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