Application of Surface Charge Lithography to Nanostructuring of GaN Epilayers
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POPA, Veaceslav, VOLCIUC, Olesea, TIGINYANU, Ion, SARUA, Andrei, HEARD, Peter. Application of Surface Charge Lithography to Nanostructuring of GaN Epilayers . In: Surface Engineering and Applied Electrochemistry, 2008, nr. 1(44), pp. 6-8. ISSN 1068-3755.
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Surface Engineering and Applied Electrochemistry
Numărul 1(44) / 2008 / ISSN 1068-3755 /ISSNe 1934-8002

Application of Surface Charge Lithography to Nanostructuring of GaN Epilayers

Pag. 6-8

Popa Veaceslav1, Volciuc Olesea1, Tiginyanu Ion1, Sarua Andrei2, Heard Peter2
 
1 Technical University of Moldova,
2 Institute of Applied Physics, Academy of Sciences of Moldova
 
Disponibil în IBN: 13 decembrie 2013


Rezumat

It is shown that treatment of GaN epilayers by a low energy low dose focused ion beam with subsequent photoelectrochemical etching represent an efficient tool for GaN nanostructuring. Direct “writing” of a surface negative charge trapped by radiation defects allows one to fabricate thin GaN walls with a thickness as low as 100 nm using focused ion beam treatment. The obtained results show that the undercut etching inher- ent to GaN etching through windows defined by surface charge lithography depends on the depletion length in the doped GaN material and does not occur in the structures below a critical size of 200 nm in our case.