Conţinutul numărului revistei |
Articolul precedent |
Articolul urmator |
980 0 |
SM ISO690:2012 POPA, Veaceslav, VOLCIUC, Olesea, TIGINYANU, Ion, SARUA, Andrei, HEARD, Peter. Application of Surface Charge Lithography to Nanostructuring of GaN Epilayers
. In: Surface Engineering and Applied Electrochemistry, 2008, nr. 1(44), pp. 6-8. ISSN 1068-3755. |
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Surface Engineering and Applied Electrochemistry | |||||
Numărul 1(44) / 2008 / ISSN 1068-3755 /ISSNe 1934-8002 | |||||
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Pag. 6-8 | |||||
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It is shown that treatment of GaN epilayers by a low energy low dose focused ion beam with subsequent photoelectrochemical etching represent an efficient tool for GaN nanostructuring. Direct “writing” of a surface negative charge trapped by radiation defects allows one to fabricate thin GaN walls with a thickness as low as 100 nm using focused ion beam treatment. The obtained results show that the undercut etching inher-
ent to GaN etching through windows defined by surface charge lithography depends on the depletion length in the doped GaN material and does not occur in the structures below a critical size of 200 nm in our case.
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