Modulation of electrical conductivity and lattice distortions in bulk HVPE-grown GaN
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WOLFF, Niklas; JORDT, Philipp; BRANIŞTE, Tudor; POPA, Veaceslav; MONAICO, Eduard; URSAKI, Veacheslav; PETRARU, Adrian; ADELUNG, Rainer; MURPHY, Bridget Mary; KIENLE, Lorenz; TIGINYANU, Ion. Modulation of electrical conductivity and lattice distortions in bulk HVPE-grown GaN. In: ECS Journal of Solid State Science and Technology. 2019, nr. 8(8), pp. 141-146. ISSN 2162-8769.
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ECS Journal of Solid State Science and Technology
Numărul 8(8) / 2019 / ISSN 2162-8769 /ISSNe 2162-8777

Modulation of electrical conductivity and lattice distortions in bulk HVPE-grown GaN

DOI: 10.1149/2.0041908jss
Pag. 141-146

Wolff Niklas1, Jordt Philipp1, Branişte Tudor2, Popa Veaceslav2, Monaico Eduard2, Ursaki Veacheslav2, Petraru Adrian1, Adelung Rainer1, Murphy Bridget Mary1, Kienle Lorenz1, Tiginyanu Ion23
1 University of Kiel,
2 Technical University of Moldova,
3 Academy of Sciences of Moldova
Disponibil în IBN: 3 octombrie 2019


The nature of self-organized three-dimensional structured architectures with spatially modulated electrical conductivity emerging in the process of hydride vapor phase epitaxial growth of single crystalline n-GaN wafers is revealed by photoelectrochemical etching. The amplitude of the carrier concentration modulation throughout the sample is derived from photoluminescence analysis and the localized heterogeneous piezoelectric response is demonstrated. The formation of such architectures is rationalized based on the generation of V-shaped pits and their subsequent overgrowth in variable direction. Detailed structure analysis with respect to X-ray diffraction and transmission electron microscopy gives striking evidence for inelastic strain to manifest in distortions of the P63mc wurtzite-type structure. The deviation from hexagonal symmetry by angular distortions of the β angle between the basal plane and c-axis is found to be of around 1°. It is concluded that the lattice distortions are generated by the misfit strains originating during crystal growth, which are slightly relaxed upon photoelectrochemical etching. 

Carrier concentration, Electric conductivity, electrochemistry, etching, High resolution transmission electron microscopy, III-V semiconductors, Modulation, strain, Zinc sulfide