Cadmium sulfide and solid solutions on its basis are used for the manufacture of acoustoelectric devices, optoelectronic devices, solar cells, sensors of infrared radiation, lasers [1]. Further practical application of such semiconductor materials requires the development of more efficient methods of their production in thin film form and with a wide range of electro physical, optical and photoelectrical properties.   Of particular interest are solid solutions of the composition of CdxZn1-xS, because these compounds allow obtaining a continuous series of solid solutions with the change of the band gap in the range from 2.4 to 3.7 eV [2].   In the present work shows, the possibility of obtaining such films of composition Cd0.98Zn0.02S from an aqueous electrolyte composed of: 0.2M Na2S2O3 + 0.28M CdSO4. The deposition was carried out in galvanostatic mode at a current density of 2.7 mA/cm2. The temperature of the electrolyte was maintained equal to 85˚C, control of pH was carried out by adding sulfuric acid and was maintained equal to pH=2.   As substrates for the growth of the film used glass coated with Tin oxide, which serves as the cathode. As counter electrode, was used a soluble zinc anode. The duration of one cycle of deposition varied depending on the required film thickness in the range from 0.5 to 3 hours.   The film thus obtained are polycrystalline and have a wurtzite-type structure. The results of X-ray diffraction showed that the value of the lattice parameters of deposited films correspond to the composition of Cd0.98Zn0.02S.