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 SM ISO690:2012BOTNARIUC, Vasile, GASHIN, Peter A., GORCEAC, Leonid, KETRUSH, Petru, INCULETS, Ion, CINIC, Boris, KOVAL, Andrei, RAEVSKY, Simion. Photovoltaic cells with nCdS-pInP and an epitaxial intermediate p˚InP layer. In: Materials Science and Condensed Matter Physics, Ed. 8-th Edition, 12-16 septembrie 2016, Chişinău. Chişinău: Institutul de Fizică Aplicată, 2016, Editia 8, p. 274. ISBN 978-9975-9787-1-2. |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
| Materials Science and Condensed Matter Physics Editia 8, 2016 |
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Conferința "International Conference on Materials Science and Condensed Matter Physics" 8-th Edition, Chişinău, Moldova, 12-16 septembrie 2016 | ||||||
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| Pag. 274-274 | ||||||
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High resistance of InP based photovoltaic cells (PC) to the ionized radiation [1] and relative stable photovoltaic parameters at the temperature variation [2] along with high value of their efficiency [3] determines the interest to their using in photo-energetics. Electrical and photoelectrical properties of n+CdS-poInP-p+InP(PC) with an intermediate poInP epitaxial layer repeatedly deposited from a gaseous phase in an In-PCl3-H2 system were studied. |
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