Cu2ZnSnS4 (CZTS) is a promising semiconductor material for absorber layer in thin film solar cells. Nevertheless, a low open circuit voltage with respect to the band gap is a common phenomenon in CZTS photovoltaic devices due to the inhomogeneities in structure, phase or composition of polycrystalline thin films. To gain a detailed knowledge of the transport properties of phase pure CZTS, the homogeneous, single phase powder samples were used in this study.  Off-stoichiometric CZTS powder samples have been synthesized by solid state reaction, and their transport properties have been studied. For investigations of the temperature dependence of resistivity, ρ (T), the obtained CZTS powders were pressed in pellets. The contacts were made by silver paste and standard dc configuration was used. The activation character of ρ (T) was observed in the range of ~ 50 – 300 K for all samples. Plotting of the temperature dependence of the resistivity in different coordinates allowed to establish the Mott variable range hopping (VRH) conductivity in all the samples within a wide temperature range (see Fig. 1).  With the analysis of the VRH conductivity data, proposed in Refs. [1, 2], the values of width of the acceptor band, W ~ 90 – 170 meV and of the relative acceptor concentration, N / Nc ~ 0.12 - 0.27, as well as those of the relative localization radius, a / aB ~ 1.1 - 1.4, have been obtained. Here, Nc is the critical acceptor concentration of the metal-insulator transition (MIT) and aB is the Bohr radius. These data imply, that all the samples are rather far from the MIT. Using the dielectric permittivity of an ideal CZTS lattice, κ₀ ~ 7 [1, 2], we obtained the values of the localization radius a ~ 9 - 12 Å and the acceptor concentration N ~ (3.8 - 8.7)x10¹⁸ cm-3, as well as those of a_B ~ 7.9 Å and Nc ~ 3.2x10¹⁹ cm^-3. These values  agree reasonably well  with corresponding results for CZTS single crystals [1]. This work was supported by the institutional project and STCU #5985.