Topological insulator Bi2Te3 layers, transport and thermoelectric properties

Nikolaeva Albina; Konopko Leonid; Rogacki Krzysztof; Rusu Alexandru; Griţco Roman

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2022-11-01 15:24

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NIKOLAEVA, Albina, KONOPKO, Leonid, ROGACKI, Krzysztof, RUSU, Alexandru, GRIŢCO, Roman. Topological insulator Bi2Te3 layers, transport and thermoelectric properties. In: Materials Science and Condensed Matter Physics, Ed. 8-th Edition, 12-16 septembrie 2016, Chişinău. Chişinău: Institutul de Fizică Aplicată, 2016, Editia 8, p. 261. ISBN 978-9975-9787-1-2.

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Materials Science and Condensed Matter Physics
Editia 8, 2016

Conferința "International Conference on Materials Science and Condensed Matter Physics"
8-th Edition, Chişinău, Moldova, 12-16 septembrie 2016

Topological insulator Bi2Te3 layers, transport and thermoelectric properties

Pag. 261-261

Nikolaeva Albina¹², Konopko Leonid¹², Rogacki Krzysztof², Rusu Alexandru¹, Griţco Roman¹³

¹ Institute of the Electronic Engineering and Nanotechnologies "D. Ghitu" of the Academy of Sciences of Moldova,
² International Laboratory of High Magnetic Fields and Low Temperatures,
³ Technical University of Moldova

Proiecte:

Menționat în lucrare: 15.817.02.09A Micro şi nanostructuri funcţionale din semiconductori organici şi anorganici pentru microelectronică. Convertoare de energie.

Disponibil în IBN: 2 august 2019

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Rezumat

We have investigated thermoelectric properties and Shubnikov de Haas (SdH) oscillations in topological insulator (TI) Bi2Te3 layers. TI are electronic materials that have a bulk band gap like an ordinary insulator but have protected conduction state on their edge of surface. These states are possible due to the combination as spin- orbit interactions and time- reversal symmetry [1]. It has been predicted theoretically that thermoelectric figure of merit can be strongly enhanced in Bi2Te3 thin films TI [2].