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 SM ISO690:2012ANGHEL, Sergiu, SINGH, Akshay, PASSMANN, Felix, IWATA, Hikaru, MOORE, Nick, YUSA, Go, LI, Xiaoqin, BETZ, Markus. GaAs quantum well – manipulation of the spin lifetimes of the two dimensional electron gas. In: Materials Science and Condensed Matter Physics, Ed. 8-th Edition, 12-16 septembrie 2016, Chişinău. Chişinău: Institutul de Fizică Aplicată, 2016, Editia 8, p. 217. ISBN 978-9975-9787-1-2. |
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| Materials Science and Condensed Matter Physics Editia 8, 2016 |
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Conferința "International Conference on Materials Science and Condensed Matter Physics" 8-th Edition, Chişinău, Moldova, 12-16 septembrie 2016 | ||||||
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| Pag. 217-217 | ||||||
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Exciton, trion and electron spin dynamics in a 20 nm wide modulation-doped GaAs single quantum well are investigated using resonant ultrafast two-color Kerr rotation spectroscopy (MOKE). It is shown that the photoluminescence (PL), KR and the MOKE signals of the 20 nm GaAs QW are strongly dependent on the back gate voltage. Excitons and trions are selectively detected by resonant probe pulses while their relative spectral weight is controlled by adjusting the gate voltage which tunes the carrier density. Tuning the carrier density markedly influences the spin decay time of the two dimensional electron gas. |
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