The reputed “IGZO (indium–gallium–zinc-oxide) technology” is considered the cornerstone of the nowadays electronic gadget markets, partly answering to demands like lower power consumption, accurate touch panels and higher resolution. However, in spite of the great efforts dedicated lately by the scientific community to the improvement of the electrical stability of the IGZO-based devices, their instability still remains a challenge for IGZO thin films transistor devices (TFTs). In this respect, one of the prominent causes, the self-heating effect, constitutes a problem to be mandatory solved for the next generation displays, as it induces the degradation of important output parameters such as field effect mobility or sub-threshold and threshold slope [1,2].  Aluminum nitride (AlN) is a viable alternative for gate dielectric of TFTs due to its good thermal conductivity, matching coefficient of thermal expansion to IGZO, and excellent stability and performance at high temperatures.  The AlN thin films were fabricated by a low cost and time efficient deposition process: low temperature reactive radio-frequency magnetron sputtering, using Al as cathode target.  AlN layers have been integrated as gate-dielectric in transparent micro-sized TFTs with IGZO as channel semiconductor. Our study emphasizes the potential of AlN thin films for transparent electronics, whilst the functionality of the fabricated field-effect transistors is explored and discussed.  Acknowledgments:This research was supported by the UEFISCDI PN-II-RU-TE-2014-4-1122.