Evolution of deformation zone under microindentation at high temperature annealing of GaP crystals
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ZHITARU, R, PALISTRANT, Natalia, PYSHKIN, Serghei. Evolution of deformation zone under microindentation at high temperature annealing of GaP crystals. In: Materials Science and Condensed Matter Physics, Ed. 8-th Edition, 12-16 septembrie 2016, Chişinău. Chişinău: Institutul de Fizică Aplicată, 2016, Editia 8, p. 178. ISBN 978-9975-9787-1-2.
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Materials Science and Condensed Matter Physics
Editia 8, 2016
Conferința "International Conference on Materials Science and Condensed Matter Physics"
8-th Edition, Chişinău, Moldova, 12-16 septembrie 2016

Evolution of deformation zone under microindentation at high temperature annealing of GaP crystals


Pag. 178-178

Zhitaru R, Palistrant Natalia, Pyshkin Serghei
 
Institute of Applied Physics, Academy of Sciences of Moldova
 
Disponibil în IBN: 30 iulie 2019


Rezumat

The present article has been to study the influence of high temperature annealing on peculiarity of change of size and form of dislocation rosettes, arising under microindentation. The annealing at high temperatures rather intensified the work of the new glide systems that furthered (promoted) to dislocation running on a different crystallographic planes and directions. All this is accompanied by dislocation multiplication by means of cross slip method.   It was established that microhardness magnitude and structure of dislocation zone of deformation at microindentation of gallium phosphide (GaP) crystals can be regulated by high temperature annealing (table). Table. High temperature annealing influence on microhardnes (HV), lengths of dislocation rosette rays (L) and crack magnitude (Lc) under healing   T, 0C (annealing) HV, MPa ( before) HV, MPa (after annealing) L, ray length, µm Lc, length of cracks, µn 400 81,2 82,3 35      38 800 81,6 77,8 42 42 920 81,6 83,0 46,3 40 1000 81,6 69,0 44(rounding off) 24 (healing) It was revealed the evolution of dislocation structure with annealing temperature rise. The deformation zone (at first T<400°C), as a dense region, with cracks of three directions along [112], close to indents is visualized. Then with temperature increase (T~800 °C) the dislocation running (spread) and ordered dislocation rays and rosettes of different view and size are reflected. Interaction of dislocations of dual systems (011) and (101) leads to obstacles formation hindering to moving of dislocations in original glide planes. That phenomenon facilitates to off-orientation of dislocation rays and dislocation scatterings. At very high temperatures (900-1000 °C) the bend of dislocation rays are appeared [1]. The last one about occurrence of some properties of isotropy is evidenced. Since there is linear relationship between length of dislocation rays and temperature indentation at very high temperatures (900-1000 °C) the bend of dislocation rays are appeared [1].   There are also the twins within the indents under load (1-2 MPa), table and fig.1. The annealing at high temperatures rather intensified the work of the new glide systems that promoted to dislocation running (approach) on a different crystallographic planes and directions. All this are followed by dislocation multiplication by means of cross slip method.   It was also established that microhardness magnitude and structure of dislocation zone of deformation at microindentation of gallium phosphide (GaP) crystals can be regulated by high temperature annealing. At very high temperatures (900-1000 °C) the bend of dislocation rays are appeared [1].