Dynamics of polarization switching is the one of the most important problem of ferroelectric-based electro-optical modulators, electro-optical switchers, and high-speed nonvolatile ferroelectric random access memories. Investigation of the dynamics of polarization reversal is highly important for optimization of the films parameters with respect to their switching characteristics [1]. Recently it was shown that nonlinear-optical microscopy based on second harmonic generation (SHG) allows to investigate both polarization switching effects and domain structure in ferroelectric and multiferroic materials [2].     The goal of this work was studing the local polarization switching in  ferroelectric-multiferroic Ba0,8Sr0,2TiO3/Bi0.97FeNd0.03O3 (BST/BFO) structures with planar electrode geometry by SHG microscopy. For the SHG measurements the output of a Ti:Sapphire laser was at 800 nm with a pulse width of about 100 fs, a repetition rate of 80 MHz, focused onto a spot of about 1,7 μm.   Thin films within multilayer BST/BFO were deposited on (001) MgO single-crystalline substrate by sputtering of polycrystalline target of the corresponding composition. The surface morphology was investigated by using atomic-force microscopy.   We shown the experimental results in films BST/BFO (1,5 nm/ 1,2 mkm) and BST/BFO/BST (70 nm ): the polarization switching and the distribution of ferroelectric properties in the gap (2 mkm) between two planar electrodes under applied voltage of  ±25 V.  Maximum of SHG intensity observed in BST/BFO films near the electrodes edges. Signal distribution between the electrodes in BST/BFO/BST is more homogenous than in BST/BFO, but SHG intensity is significantly less due to the existence of the upper layer.     Asymmetry of nonlinear optical response under applied voltage shows the increasing unswitchable polarization in structures.   This work is supported by  Russian Foundation for Basic Research (Contact №16-32-00687).