Pressure-Induced Semiconductor-Semimetal Transition in Rb0.8Fe1.6S2
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BASKAKOV, Arseniy O., OGARKOVA, Yu L., LYUBUTIN, Igor S., STARCHIKOV, Sergey S., KSENOFONTOV, Vadim G., SHYLIN, Sergii I., KROITOR, Dumitru, TSURKAN, Vladimir, MEDVEDEV, Sergey A., NAUMOV, Pavel G.. Pressure-Induced Semiconductor-Semimetal Transition in Rb0.8Fe1.6S2. In: JETP Letters, 2019, nr. 8(109), pp. 536-540. ISSN 0021-3640. DOI: https://doi.org/10.1134/S0021364019080058
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JETP Letters
Numărul 8(109) / 2019 / ISSN 0021-3640

Pressure-Induced Semiconductor-Semimetal Transition in Rb0.8Fe1.6S2

DOI:https://doi.org/10.1134/S0021364019080058

Pag. 536-540

Baskakov Arseniy O.1, Ogarkova Yu L.1, Lyubutin Igor S.1, Starchikov Sergey S.1, Ksenofontov Vadim G.2, Shylin Sergii I.2, Kroitor Dumitru3, Tsurkan Vladimir34, Medvedev Sergey A.5, Naumov Pavel G.15
 
1 A.V.Shubnikov Institute of Crystallography, Moscow,
2 Johannes Gutenberg University Mainz,
3 Institute of Applied Physics,
4 University of Augsburg,
5 Max Planck Institute for Chemical Physics of Solids
 
 
Disponibil în IBN: 25 iulie 2019


Rezumat

The transport and magnetic properties of the Rb0.8Fe1.6S2 crystal have been studied under quasihydrostatic compression to a pressure of 40.5 GPa in diamond anvil cells. A semiconductor-semimetal electronic transition has been detected at a pressure of about 15 GPa. In addition, the disappearance of the magnetic order down to a temperature of 3 K has been found at a pressure of 24 GPa. It has been shown that, in contrast to a similar selenium compound Rb0.8Fe1.6Se2, superconductivity in Rb0.8Fe1.6S2 sulfide does not appear down to the lowest temperatures even at an external pressure of 40.5 GPa.