Influence of molybdenum presence in the process of crystal growth on radiative properties of zinc selenide
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GONCEARENCO, Evghenii, SUSHKEVICH, Konstantin, NEDEOGLO, Natalia, NEDEOGLO, Dumitru. Influence of molybdenum presence in the process of crystal growth on radiative properties of zinc selenide. In: Materials Science and Condensed Matter Physics, Ed. 8-th Edition, 12-16 septembrie 2016, Chişinău. Chişinău: Institutul de Fizică Aplicată, 2016, Editia 8, p. 89. ISBN 978-9975-9787-1-2.
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Materials Science and Condensed Matter Physics
Editia 8, 2016
Conferința "International Conference on Materials Science and Condensed Matter Physics"
8-th Edition, Chişinău, Moldova, 12-16 septembrie 2016

Influence of molybdenum presence in the process of crystal growth on radiative properties of zinc selenide


Pag. 89-89

Goncearenco Evghenii, Sushkevich Konstantin, Nedeoglo Natalia, Nedeoglo Dumitru
 
Moldova State University
 
 
Disponibil în IBN: 19 iulie 2019


Rezumat

The possibility to grow zinc selenide crystals doped with molybdenum impurity and radiative properties of these samples are studied. Crystal growth was carried out by the chemical vapor transport method using iodine as a transport agent. The amount of molybdenum impurity introduced to the ampoules before the sample growth was calculated in such a way that the concentrations in the samples were equal to 0.01, 0.02 and 0.06 at.%. Luminescence of the samples was excited by laser radiation with excitation wavelengths of 337, 473, 532, 637, and 785 nm and was investigated in the 400 – 3000 nm range at temperatures of 77 and 300K.   At 77K, the photoluminescence (PL) maxima are localized at 448, 525, 600, and 635 nm. The first PL band is attributed to the edge luminescence caused by “band-to-band” transitions, excitonic PL and “shallow donor-valence band” transitions [1]. The bands at 525 and 635 nm are stipulated by electron transitions from the conduction band to Сu2+ and Cu+ acceptor levels, respectively [2]. The PL band localized at 600 nm is attributed to VZn-based self-activated luminescence centre.   Radiative properties of zinc selenide samples in infra-red (IR) spectral range manifest themselves only under excitation with energy below the band gap. The registered PL bands with maxima at 980, 1660, 1950, and 2330 nm are attributed to intrashell transitions as their positions are unchanged with temperature increase. It is supposed that the weak intensity band at 1660 nm is caused by intrashell transition within the Cu2+ ion. Chromium is an easily diffusible element and is often present in zinc selenide crystals as a background impurity. Due to this fact, the PL bands at 980 and 2330 nm are attributed to intrashell transitions from the second (3Т1) and the first (5Е) excited states of chromium ion to the ground (5Т2) state, respectively [2]. Under excitation of the samples with radiation of λexc = 785 nm, the PL band at 1950 nm is observed, and the maximum and shape of this band are unchanged with temperature changing. Dependence of the band intensity on inverse temperature in ln(I0/I-1) ~ (1/T) coordinates is linear, the band full width at half minimum follows the hyperbolic cotangent law with ½ power in dependence on inverse temperature, and the band shape corresponds to analytical equation describing the bands of intrashell radiation. Our experimental results allow attributing this IR PL band to (3Т2 – 3А2) intrashell transitions within V3+ ions [3].   Thus, it is established that ZnSe:Mo crystals contain chromium, copper, and vanadium as background impurities, which are responsible for PL bands in both visible and IR ranges. Investigation of PL spectra for ZnSe:Mo samples in the 400 – 3000 nm range demonstrates that the molybdenum impurity has no essential influence on radiative properties of ZnSe crystals. It is supposed that molybdenum ions may be lack in zinc selenide samples due to poor transportation in the process of gas-transport reactions or they are optically inactive centres.