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SM ISO690:2012 NISTREANU, Andrei. Theory of photoluminescence spectra in a N-type GaAs semiconductor. In: Materials Science and Condensed Matter Physics, Ed. 8-th Edition, 12-16 septembrie 2016, Chişinău. Chişinău: Institutul de Fizică Aplicată, 2016, Editia 8, p. 81. ISBN 978-9975-9787-1-2. |
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Materials Science and Condensed Matter Physics Editia 8, 2016 |
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Conferința "International Conference on Materials Science and Condensed Matter Physics" 8-th Edition, Chişinău, Moldova, 12-16 septembrie 2016 | |||||
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Pag. 81-81 | |||||
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Using optical laser fields to manipulate electron Spins in a High-Purity n-Type GaAs Semiconductor is a promising path toward solid-state quantum information processing. Related to this are the effects known as coherent population trapping (CPT) [1] and electromagnetically induced transparency (EIT) [2], in which spin levels are driven by optical fields to a common excited state, resulting in a non absorption resonance due to destructive quantum interference between two absorption pathways. Based on this we developed a theory of photoluminescence(PL), CPT and EIT spectra in the presence of a strong coupling field and a weak probe field, using the quantum-mechanical densitymatrix master equation approach. One finds that many of the qualitative features of the PL,CPT and EIT spectra can be obtained from the solution of the eigenvalue problem of the three-level Hamiltonian involving ground states |1> and |2> and a Donor-Bound Exciton(D0X) state |3> . To find details of the shape of the spectra, we have to include both the non-radiative and radiative decay terms in the density matrix master equation, and then solve for the two-time system correlation functions. Numerical results for the resulting PL, CPT and EIT spectra are presented[see Fig(1) and Fig.(2)]. |
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