Electroluminescent switch with controlled by light S-shaped current-voltage characteristics based on n-InSe
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ABDINOV, A., BABAYEVA, R., RASULOV, Elidaniz. Electroluminescent switch with controlled by light S-shaped current-voltage characteristics based on n-InSe. In: Materials Science and Condensed Matter Physics, Ed. 8-th Edition, 12-16 septembrie 2016, Chişinău. Chişinău: Institutul de Fizică Aplicată, 2016, Editia 8, p. 57. ISBN 978-9975-9787-1-2.
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Materials Science and Condensed Matter Physics
Editia 8, 2016
Conferința "International Conference on Materials Science and Condensed Matter Physics"
8-th Edition, Chişinău, Moldova, 12-16 septembrie 2016

Electroluminescent switch with controlled by light S-shaped current-voltage characteristics based on n-InSe


Pag. 57-57

Abdinov A.1, Babayeva R.2, Rasulov Elidaniz1
 
1 Baku State University,
2 Azerbaijan State Economic University, Baku
 
Disponibil în IBN: 18 iulie 2019


Rezumat

The undeniable opportunity of practical application of optoelectronic devices and installations in various fields of science, technology and consumer spheres stimulate intensive researches in direction of the creation and studies of the physical properties of semiconductor materials for this field of electronics.   In this work we report some experimental results which are of interest for optoelectronics, received by us in a combined study of electric, photovoltaic and electroluminescent properties of indium selenide (n-InSe) single crystal under different external and intracrystalline conditions.   Measurements were carried out over a wide range of temperatures (77 ÷ 350 K), the electric field applied to the sample (from the extremely weak up to 2.5.103 V/cm), wavelengths (λ = 0.30 ÷ 2.00 m) and light intensity (from the extremely weak up to  5.102 Lx).   It was found that at temperatures below 350 К in this semiconductor bistable switching effect (high-speed effect with memory) is observed and current-voltage characteristics (CVC) in spite of S-shape, also is strictly symmetrical with respect to the polarity of the external voltage applied to the sample. More accurately, the sample consisting of n-InSe crystal with two ohmic currentcarrying contacts (the system having a resistor structure) shows triac character. Moreover, the voltage and the switching current values in this case is reasonably managed by the impact of lighting – they depend on the wavelength and intensity of light acting on the studied system. With increasing light intensity, value of switching voltage (Uswitch) decreases, and the dependence of U on the light wavelength correlated with the photoconductivity spectrum in the studied sample. At temperatures below ~ 200 K in this semiconductor in the wavelength range (0.90 ÷ 1.10) m (with a peak at 0.965 m) also observed clearly marked injection electroluminescence. Moreover, in prebreakdown part of CVC (при U  Uswitch) the brightness of the electroluminescent radiation with U increases superlinearly, and with a current through the sample - linearly. At switching effect the brightness of electroluminescent radiation drops sharply to zero (emission stops), i.e. switching occurs also in electroluminescent radiation.   Identified features of the switching effect and electroluminescence allow recommend  crystals of layered semiconductor n-InSe as a promising material for creation photoreceivers and electroluminescent light sources with symmetrical S-shaped (triac) CVC and significantly simple manufacturing technology compared with the respective counterparts, consisting of several interleaved p-n junctions.   Experimental results obtained in present study are explained qualitatively satisfactorily on the basis of combination of injection-induced impurity breakdown with the recombination of injected minority carriers through the r-centers and a sharp decrease in the voltage drop in the studied sample at switching effect.