Formation on silicon substrate and characterization of two-dimensional nanomaterials on base of transition metals
Închide
Articolul precedent
Articolul urmator
467 0
SM ISO690:2012
PLUSNIN, N.. Formation on silicon substrate and characterization of two-dimensional nanomaterials on base of transition metals. In: Materials Science and Condensed Matter Physics, Ed. 8-th Edition, 12-16 septembrie 2016, Chişinău. Chişinău: Institutul de Fizică Aplicată, 2016, Editia 8, p. 35. ISBN 978-9975-9787-1-2.
EXPORT metadate:
Google Scholar
Crossref
CERIF

DataCite
Dublin Core
Materials Science and Condensed Matter Physics
Editia 8, 2016
Conferința "International Conference on Materials Science and Condensed Matter Physics"
8-th Edition, Chişinău, Moldova, 12-16 septembrie 2016

Formation on silicon substrate and characterization of two-dimensional nanomaterials on base of transition metals


Pag. 35-35

Plusnin N.
 
Institute of Automation and Control Processes, Far Eastern Branch of RAS
 
Disponibil în IBN: 18 iulie 2019


Rezumat

Two-dimensional layered nanostructures based on layers of Fe, Co, Cr, Cu on Si (111) and (001) are interesting from the point of view of their possible application as a new thin-film materials for silicon nanoelectronics and spintronics [1, 2]. This report provides an overview of our experience on their characterization and formation.     We have shown new possibilities of using AES, EELS and AFM to adapt them for the specific objects of the given structural and phase analysis. These are: (1) - differential EELS spectroscopy with subtracting the substrate contribution from the general spectrum; (2) - measurement of EELS (EP), as a function on EP, to determine the profile of the electron density over the depth; (3) - combination of AES and EELS with  the identical and surface-sensitive depths of probing for structural and phase analysis; (4) - use of EELS data for study of the interface electron structure evolution; (5) - use of EELS for the adjustment of film thickness; (6) – spectroscopy of plasmon satellite peaks in AES for study of formation of the interface layer; (7) - use of AES data for determination of the dislocation of position of adatoms in coating relatively to position of substrate surface atoms; (8) – AFM data analysis by optimization of the  grain cross-section level on the height for determination of the number of grains in a coating. Furthermore, a series of metal evaporation sources with lowered thermal power of vapor and also the head with pressured 4-probes for more accurate measuring evolution of electrical resistance independently on procedures of film formation and its analysis have been developed.   Studies were conducted by methods of physical vapor deposition (PVD) under vacuum and by solid phase epitaxy (SPE). The influence of surface reconstructions and 2D wetting layer, as well as influence of vapor parameters on the formation of the interfaces in the system of transition metal – silicon have been shown. The following types of PVD growth have been proposed: (1) - with high density of vapor (D-PVD), (2) - with low temperature of vapor (LT-PVD) and (3) - with combination thereof (DLT-PVD). A new method of forming a template layer (T) by means of its solid phase epitaxy from the wetting layer (WL) has been proposed (WLT-SPE). In general, the common approach to managing the interface formation has been formed by using of: (A) – metal induced reconstructions, wetting layer of the metal, ensemble of seed islands and template layer, and (B) - effects of transporting the latent heat of the vapor and/or of the film itself (during 2D-3D phase transition) to the growing film.     We have shown that, during multilayer metal film formation at the room temperature, the growth of the first metal layer is the most important for the growth of all film. This layer grows locally in a layer-by-layer mode in the form of islands. If this layer formation takes place without a buffer 2D or 3D silicide layer or at elevated temperature of deposited vapor, the layer is mixed with the silicon of the substrate. Subsequent layers of other metals grow in a similar manner, and may be partially intermixed with the first layer.     Multilayer films consisting of alternating layers of Cu, Fe, Cu, Co and Cu on the Si (001) have been grown. It was found that they show the technical level of magnetization in the range from low to medium values of the coercive force, which suggests their use as new nanomaterials for spintronics.