Silicon integrated photonics, taking into account the indirect band gap nature and the inability to build silicon LEDs in the transparency of silicon (1500-1600 nm) was not considered until now as possible. Instead, the prospect of A3B5 direct semiconductors and their alloys growth on silicon substrates was previously considered, which proposed the creating of basic optical elements: LEDs, optical waveguides, optical modulators, amplifiers and photodiodes, on the basis of additional materials (SiO2 waveguides, electro-optical polymer compounds (LiNBO3, BaTiO3 and others)) [1]. However, such an approach with the use of hinged elements does not suggest the possibility of only the standard CMOS technology using at creating of integrated circuits with optical connection. Recently in the work of Y. Maeda [2] an approach for creation of silicon optoelectronic integrated circuits (Si-OEICs) was proposed, in which Si/-FeSi2/Si double heterostructures with -FeSi2 epitaxial films were planned as LEDs, but -FeSi2 film/Si heterojunction were proposed as well as photodetector with light emitting and detection at the wavelength 1500 nm.    This paper discusses a new approach to creation the basis of a silicon-silicide integrated photonics based on silicon p-n transitions with the multilayers of -FeSi2 and/or CrSi2 nanocrystals embedded in p-Si layer, the achieved results on the photo detector and LEDs in the wavelength range 13001700 nm and prospects of the realization of optical interconnects between transistors in silicon integrated circuits are evaluated.  Using this approach, the defect-free p+-p--n structure with 7 embedded -FeSi2 NCs layers, layer density of 1·109 cm-2 and a thickness of silicon covering layer of 15 nm [3] was grown. P+-Si/p-Si/-FeSi2 NCs/n-Si(111) diode structure was formed on its base, for which at zero bias and RT a current responsivity of 1.7 mA/W, EQE of 0.2% and DSD of 1.2 × 109 cm × Hz1/2/W at a wavelength of 1300 nm have been obtained. In the avalanche mode (-50 V), the current responsivity reached up 20 mA/W (2% in terms of EQE) with an avalanche gain value equal to 5 [3]. Obtained data have demonstrated that embedding of -FeSi2 NCs in the Si p-n junction depletion region leads to expending of the spectral sensitivity up to 1700 nm and increasing of photoresponse at RT over two orders of magnitude [3] compared to the standard Si p-n diode. On the same diode structure with seven -FeSi2 NCs layers, the 25 micro watt power emission in the wavelength range of 15001550 nm at RT was also obtained for the first time. This intensive electroluminescence was observed at pumping current density of 0.7 A/cm2, which is a record low value. LED’s structure reached 25 µw power emissions with external quantum efficiency of 5×10-3%. Linear dependence of optical power emission versus pumping current density throughout the studied range showed the minimization of non-radiative channels for carrier’s recombination in the diode structures. The stressed structure of -FeSi2 NCs with sizes lower 15 nm ensured the formation of type-I heterostructure with direct band gap light emission and weak quantum confinement that allows to count on creating of high-speed silicon IR LEDs working for RT. This provides a light emissivity and/or silicon photodiode spectral sensitivity in the photon energy range below the Si band gap (0.5-1.0 eV) and retains a photoresponse in the photon energy range of 1.1-4.0 eV [3-5]. This work was carried out with financial support from the Russian Science Foundation grant (No. 16-19-10241).