| Articolul precedent |
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 SM ISO690:2012LEISNER, Malte, CARSTENSEN, Juergen, FOLL, Helmut. Monte-Carlo-simulation of crystallographical pore growth in III-V-semiconductors. In: Nanotechnologies and Biomedical Engineering, Ed. 1, 7-8 iulie 2011, Chișinău. Technical University of Moldova, 2011, Editia 1, pp. 13-15. ISBN 978-9975-66-239-0.. |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
| Nanotechnologies and Biomedical Engineering Editia 1, 2011 |
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Conferința "International Conference on Nanotechnologies and Biomedical Engineering" 1, Chișinău, Moldova, 7-8 iulie 2011 | ||||||
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| Pag. 13-15 | ||||||
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The growth of crystallographical pores in III-V-semiconductors can be understood in the framework of a simple model, which is based on the assumption that the branching of pores is proportional to the current density at the pore tips. The stochastic nature of this model allows its implementation into a three-dimensional Monte-Carlo-simulation of pore growth. The simulation is able to reproduce the experimentally observed crysto pore structures in III-V-semiconductors in full quantitative detail. The different branching probabilities for different semiconductors, as well as doping levels, can be deduced from the specific passivation behavior of the semiconductor-electrolyte-interface at the pore tips. |
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| Cuvinte-cheie III-V, crystallographical pores, Electrochemical etching, Monte-Carlo-Simulation, InP. |
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