Stationary and transient photocurrents in some amorphous Ge-As-Se thin films
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IOVU, Mihail; IASENIUC, Oxana. Stationary and transient photocurrents in some amorphous Ge-As-Se thin films. In: Optoelectronics and Advanced Materials, Rapid Communications. 2018, nr. 9-10(12), pp. 563-567. ISSN 1842-6573.
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Optoelectronics and Advanced Materials, Rapid Communications
Numărul 9-10(12) / 2018 / ISSN 1842-6573

Stationary and transient photocurrents in some amorphous Ge-As-Se thin films


Pag. 563-567

Iovu Mihail, Iaseniuc Oxana
 
Institute of Applied Physics
 
Disponibil în IBN: 24 iunie 2019


Rezumat

The stationary and transient characteristics of photoconductivity in thermally deposited amorphous Ge0.07As0.07Se0.86 thin films, with the theoretically calculated mean coordination number Z=2.21, are reported. Introduction of the metallic elements (Sn and Ge) in selenide and sulphide (As2S3, As2Se3, As-S-Se) glasses, lead to the appearance of the tetrahedral structural units in the base glasses, which change the mean coordination number Z. These changes lead to non-monotonous changes of the electrical, optical and photoelectrical characteristics, depending on the glass comp osition. It was found that the dependence of the photocurrent on light intensity has a power-law behavior Iph~Fβ (1.0≤β≤0.5), which is characteristic for the amorphous semiconductors with the exponential distribution of the localized states in the band gap Eg.

Cuvinte-cheie
amorphous thin films, chalcogenide glasses, Coordination number, photoconductivity