Observation of electron spin relaxation time in pnpn structured GaAs
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MOROZUMI, A., ITO, T., ICHIDA, M., ANDO, H.. Observation of electron spin relaxation time in pnpn structured GaAs. In: Nanotechnologies and Biomedical Engineering, Ed. 3, 23-26 septembrie 2015, Chișinău. Springer, 2015, Editia 3, p. 74.
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Nanotechnologies and Biomedical Engineering
Editia 3, 2015
Conferința "International Conference on Nanotechnologies and Biomedical Engineering"
3, Chișinău, Moldova, 23-26 septembrie 2015

Observation of electron spin relaxation time in pnpn structured GaAs


Pag. 74-74

Morozumi A.1, Ito T.1, Ichida M.2, Ando H.2
 
1 Research Institute of Electronics, Shizuoka University,
2 Konan University
 
Disponibil în IBN: 10 aprilie 2019


Rezumat

To observe effect of electron-hole exchange interaction on electron spin relaxation time, we performed polarization- and time-resolved PL measurements by using pnpn structured GaAs. This structure is supposed spatial distance between excited electrons and holes are changed by excitation power density. Prolongation of spin relaxation time was observed when excitation power density was weak and distance between electron and hole was long. The change of spin relaxation time attributable to the reduction of electron-hole exchange interaction in pnpn structure.