Polarized Retroreflection from Nanoporous III–V Semiconductors
Închide
Conţinutul numărului revistei
Articolul precedent
Articolul urmator
722 0
SM ISO690:2012
PRISLOPSKI, Sergey, GAPONENCO, Sergey, MONAICO, Eduard, SERGENTU, Vladimir, TIGINYANU, Ion. Polarized Retroreflection from Nanoporous III–V Semiconductors. In: Semiconductors, 2018, vol. 52, pp. 2068-2069. ISSN 1063-7826. DOI: https://doi.org/10.1134/S1063782618160248
EXPORT metadate:
Google Scholar
Crossref
CERIF

DataCite
Dublin Core
Semiconductors
Volumul 52 / 2018 / ISSN 1063-7826

Polarized Retroreflection from Nanoporous III–V Semiconductors

DOI:https://doi.org/10.1134/S1063782618160248

Pag. 2068-2069

Prislopski Sergey1, Gaponenco Sergey1, Monaico Eduard2, Sergentu Vladimir3, Tiginyanu Ion2
 
1 Stepanov Institute of Physics, National Academy of Sciences of Belarus,
2 Technical University of Moldova,
3 Institute of Applied Physics
 
 
Disponibil în IBN: 2 aprilie 2019


Rezumat

Retroreflected light with strong linear polarization coinciding with that of the incident beams is detected from strongly absorbing nanoporous III–V semiconductors. Because of high polarization of retroreflected waves we assume that coherent backscattering is the underlying physical mechanism of this phenomenon.