Electrodeposition of semiconductors for photovoltaics: case of thin film solar cells based on copper indium gallium diselenide (CIGS) thin films and related compounds
Închide
Articolul precedent
Articolul urmator
672 0
SM ISO690:2012
LINCOT, Daniel, SIDALI, Tarik, CHASSAING, Elisabeth, DUCHATELET, Aurélien, TSIN, Fabien, ROUSSET, Jean, GALLANTI, Serena, NAGHAVI, Negar, PAIRE, Myriam. Electrodeposition of semiconductors for photovoltaics: case of thin film solar cells based on copper indium gallium diselenide (CIGS) thin films and related compounds. In: Materials Science and Condensed Matter Physics, Ed. 7, 16-19 septembrie 2014, Chișinău. Chișinău, Republica Moldova: Institutul de Fizică Aplicată, 2014, Editia 7, pp. 350-351.
EXPORT metadate:
Google Scholar
Crossref
CERIF

DataCite
Dublin Core
Materials Science and Condensed Matter Physics
Editia 7, 2014
Conferința "Materials Science and Condensed Matter Physics"
7, Chișinău, Moldova, 16-19 septembrie 2014

Electrodeposition of semiconductors for photovoltaics: case of thin film solar cells based on copper indium gallium diselenide (CIGS) thin films and related compounds


Pag. 350-351

Lincot Daniel, Sidali Tarik, Chassaing Elisabeth, Duchatelet Aurélien, Tsin Fabien, Rousset Jean, Gallanti Serena, Naghavi Negar, Paire Myriam
 
Institute of Research and Development of Photovoltaic Energy
 
Disponibil în IBN: 24 martie 2019


Rezumat

Electrodeposition has emerged in recent years as a possible route for the production of semiconductor materials for optoelectronic applications and especially for photovoltaics [1]. It has the advantage of being well suited for large area thin film coatings at low temperature and without high vacuum requirement, which is highly interesting for achieving low production costs.  The scientific challenge is to reach high quality  optoelectronic properties, needed for reaching conversion efficiencies at the same level than that of similar devices produced by classical methods [1]. The first example of success has been obtained in the case of cadmium telluride thin film solar cells, which has been developed from late 70’s to 2000’s and which has been unfortunately abandoned in the recent period. In this presentation we will present the case of the other main successful thin film PV technology based on copper indium gallium diselenide (CIGS) absorber layers. Electrodeposition studies started from mid 80’s, especially in our group, around the idea of one step electrodeposition of the full compound , as developed successfully for CdTe. Device quality films were obtained by combining the electrodeposition of a precursor layer from a single bath with a post thermal annealing treatment in a selenium atmosphere [2]. However this approach was overpassed by limiting the precursor layers to only metals, without introducing selenium from theelectrodeposition step. This approach has been brought to the industrial stage, in particular by a company created in 2009 from our laboratory, Nexcis, with efficiencies about 16% for laboratory devices and 13% for modules, using separated plating bathes for each metal. Our research focused then on single plating bath approaches, with a first focus on electrochemical studies of  Cu-In-Ga alloys deposition with controlled composition from an acidic aqueous bath [3]. However the competition with hydrogen evolution makes it difficult to control both the composition and the morphology and lead us to introduce a new method based on the electrodeposition of mixed oxide layers, by electrochemically induced co precipitation from the reduction of nitrate ions [4,5]. We will present a study of the underlying electrochemical mechanism, which shows that the composition is easily controlled by the limiting diffusion fluxes of individual metal ions. The process is fast an reproducible. The structure of the layer is nanoporous and easily converted to metals by reduction. Further selenization leads to efficiencies up to 12.4%. Besides these studies with concern the main absorber layer in the CIGS solar cells, we will present results on the electrodeposition of zinc oxide transparent conducting layers, which corresponds to another key research line in our laboratory [6,7]. Efficient devices are now prepared making the method interesting for further industrial developments, with a perspective for establishing an almost full wet technology for CIGS solar cells, considering the chemical bath deposition step of the interfacial buffer layer between CIGS and ZnO.