The Cu2ZnSnS4 thin films annealed in selenium atmosphere
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DERMENJI, Lazari, BRUC, Leonid, GUK, Maxim, SIMINEL, Anatolii, CURMEI, Nicolai, SHERBAN, Dormidont, SIMASHKEVICH, Aleksey, ARUSHANOV, Ernest. The Cu2ZnSnS4 thin films annealed in selenium atmosphere. In: Materials Science and Condensed Matter Physics, Ed. 7, 16-19 septembrie 2014, Chișinău. Chișinău, Republica Moldova: Institutul de Fizică Aplicată, 2014, Editia 7, p. 267.
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Materials Science and Condensed Matter Physics
Editia 7, 2014
Conferința "Materials Science and Condensed Matter Physics"
7, Chișinău, Moldova, 16-19 septembrie 2014

The Cu2ZnSnS4 thin films annealed in selenium atmosphere


Pag. 267-267

Dermenji Lazari, Bruc Leonid, Guk Maxim, Siminel Anatolii, Curmei Nicolai, Sherban Dormidont, Simashkevich Aleksey, Arushanov Ernest
 
Institute of Applied Physics, Academy of Sciences of Moldova
 
Proiecte:
 
Disponibil în IBN: 16 martie 2019


Rezumat

Using of solid solutions of Cu2ZnSn(SxSe1-x)4 (CZTSSe) as absorber layer in thin film solar cells allowed to prepare devices with efficiencies of 12.6 % [1]. However, the applied spincoating method for the preparation of the films implied the use of high toxic hydrazine dissolvent. In this work we present our results on post selenization process of Cu2ZnSnS4 (CZTS) thin films obtained by spray pyrolysis method. The Cu2ZnSnS4 (CZTS) thin films were prepared at ambient atmosphere. Subsequent annealing of the CZTS layers in vapors of elemental selenium allowed to prepare the Cu2ZnSn(SxSe1-x)4 solid solutions. The water-ethanol solution of CuCl, Zn(O2CCH3)2, SnCl4 with 5H2O and SC(NH2)2 [2,3] was deposited on glass or glass coated ITO and CdS layers at a temperature of 450 °C. The ITO layers were also prepared by spray pyrolysis method at ambient atmosphere, while CdS layers were deposited by hot wall technique. The sheet resistance of the ITO layers with the thickness of ~ 0.4 μm was about 20 Ω/cm. The thickness of CdS layers did not exceed 1 μm. Obtained thin films of CZTS as well as structures were annealed in evacuated quartz ampoule with elemental Se at a temperature of 550 °C for 30 min. The Ag back contact to glass/ITO/CdS/CZTSSe structures was prepared by the deposition of Ag in vacuum. Obtained thin films of CZTS and CZTSSe were investigated by energy dispersive X-ray (EDX) analysis and Raman scattering technique. The chemical composition characterization showed Cu and Sn excess and S deficiency. A broad band at about 338 cm-1 was observed in Raman spectra in as-deposited samples. After annealing the slight Cu deficiency and anion excess {(S+Se)/Metals ≈ 1.1} was observed. The anion ratio was S/Se ≈ 2.0. This was confirmed by Raman spectra investigations where the two peaks at 335 cm-1 and 229 cm-1 were observed.  Structures of glass/ITO/CdS/CZTSSe/Ag were analyzed by spectral dependence of photoconductivity in the wavelength range 700 – 1200 nm with illumination from the glass side. The band gap energy was found at about 1.3 eV. These data confirm that in the obtained structures the active absorption layer is CZTSSe. However, the gently sloping increase of the photocurrent suggests that the high concentration of defects is located in the active layer of Cu2ZnSn(SxSe1-x)4.