For the modern optoelectronic devices created on the basis of low-dimensional systems, study of the phonon spectra are of great importance because phonons influence on mobility of carriers of a charge and on the relaxation time [1]. The method of spectroscopy of the Raman scattering of light allows to receive additional information on the phonon spectra of low-dimensional structures, and, therefore, in more detail to describe and study their optical and electric properties. Experimental data shows that in formation of the Raman scattering spectra of low-dimensional systems can play a significant role not only one-phonon, but multiphonon processes also [1]. On the basis of a method developed in [2] it was received ratios for coefficient of absorption of light taking into account interaction of carriers of a charge in low-dimensional structures (quantum points and wires) with phonons in the field of resonant infrared laser radiation. At calculation multiphonon processes were considered. It is shown that reduction of coefficient of absorption of light on the main frequency and emergence of phonon satellites takes place. With growth of intensity of resonant infrared radiation intensity of the main line and phonon satellites decreases in short-wave area, and in long-wave area of a range increases that is confirmed by experimental data [1, 3]. In case of great values of scattering of carriers on phonons with growth of intensity of resonant infrared of radiation the width bending around for coefficient of absorption of light increases. Dependence of frequency of LO-phonons on the size of considered nanostructures is found. It is shown that frequencies of LO-phonons decrease the more, than less sizes of considered lowdimensional systems this conclusion also has experimental confirmation [3].