The abso1ption and emission spectra of Ga-La-S:O doped with Pr3+, and Ga-Ge-As-S chalcogenide glasses doped with Pr3+, ny3+, Nd3+, Sm3+ and Ho3+ were experimentally investigated at room temperatme and at 4 K and discussed. Sulphide glasses have been proposed as potential host material for J=l.3 and 1.5 µm optical fiber amplifiers, for fiber lasers in the near - and mid infrared regions of the spectmm, for planar waveguides and ultrafast nonlinear devices. For the Gao.2sGeo.011Aso.os3So.6s glasses from the optical measmements the values of the optical band gap Eg~2.3 eV were estimated. In the glasses doped with Dy3+, Nd3+ and Ho3+ + Dy3+ the sha1p abso1ption bands due to 4f-4f up-transitions were detected. For the GaLaS:O:Pr3+ glasses the abso1ption bands are the consequence of4Hr-iD2 and 4Hr+1C4 and up-transitions. PL spectra of host glass system are demonstrated by a broad band centered at around J=1280 nm caused by transitions from band tails to states near the middle of the band gap (Fig. I and 2). All 4f- 4f emission bands of Pr3+, Nd3+, ny3+ and Ho3+ available in the investigated wavelength range of J=800+ 1700 nm were observed as superimposed of the host glass broad band luminescence band. At low-temperatme the re-abso1ption of the host glass luminescence due to rare-ea1ih ions could be observed simultaneously with the 4f-4f radiative transitions in the wavelength range, where the host glass luminescence overlaps with the 4f-4f inner shell transitions. The PL spectra of GaLaS:2.95 wt.% [O] (1) and that doped with Pr3+ (2,3) at T=4K are presented in Fig.2. One broad PL maxima in the region of 1=1100 - 1200 run was detected for all investigated GLS samples. In om previous work it was demonstrated that the effect of oxygen on the PL spectra is detennined by decreasing of host glass self-abso1ption of the sho1i-wavelength bands, which becomes visible with the increase of the oxide content.