Influence of Yb impurity on emission and absorption of ZnSe
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RADEVICI, Ivan, SUSHKEVICH, Konstantin, HUHTINEN, Hannu, NEDEOGLO, Dumitru, PATURI, Petriina. Influence of Yb impurity on emission and absorption of ZnSe. In: Materials Science and Condensed Matter Physics, Ed. 7, 16-19 septembrie 2014, Chișinău. Chișinău, Republica Moldova: Institutul de Fizică Aplicată, 2014, Editia 7, p. 114.
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Materials Science and Condensed Matter Physics
Editia 7, 2014
Conferința "Materials Science and Condensed Matter Physics"
7, Chișinău, Moldova, 16-19 septembrie 2014

Influence of Yb impurity on emission and absorption of ZnSe


Pag. 114-114

Radevici Ivan12, Sushkevich Konstantin2, Huhtinen Hannu1, Nedeoglo Dumitru2, Paturi Petriina1
 
1 University of Turku,
2 Moldova State University
 
Disponibil în IBN: 4 martie 2019


Rezumat

Study of the materials doped with rare-earth elements (REE) is interesting form the both fundamental and application points of view. For example, the interaction between REE ion 4felectrons with the free charge carriers or bulk crystal lattice recombination center electrons presents a particular interest. Absence of the free charge carriers in the pure ionic crystals allows to presuppose that such effects may be observed only in II-VI semiconductors. This context has significantly stimulated research on the optical and magnetic properties of the wide band-gap semiconductors doped with f-element ions. For successful practical application of the ytterbium doped semiconductor materials, it is necessary to determine optimal concentration of the doping impurity, which will allow the maximum efficiency of the emission. However, there is no information about the dependence of luminescent properties of ZnSe:Yb crystals on Yb ion concentration in the current literature. In this report the influence of the Yb impurity concentration on the phtoluminescence (PL) and optical density of ZnSe is analysed. The melt-grown n-ZnSe single crystals were doped with Yb by long-term (100 h) high-temperature (1200 K) annealing in Zn + Yb melt. The doping level was varied by changing the Yb concentration in Zn melt from 0.03 to 8 at.%.The Yb concentration used further corresponds to the Yb concentration in the doping melt. In the near-infrared (IR) PL spectra of ZnSe crystals doped with low concentrations of the Yb impurity a wide band with maximum close to 0,82 μm is observed. Increase of the Yb concentration in the doping melt (≥ 1 at. %) leads to decrease of the bands intensity and its shift to the longer wavelengths, at the same time an additional maximum at 0,98 μm appears in the bands structure (Fig. 1). Large emission bands with few maxima in the near-IR range are characteristic for Ybdoped crystals. The maximum at 0,98 μm is considered to be caused by 2F5/2 → 2F7/2 transitions within Yb3+ ions. It was established that Yb doping leads to increase of the optical transparency of the samples (Fig. 2) in the 500-3000 nm spectral range.