The Cu2ZnGeS4 (CZGS) quatemaiy compound is promising for photovoltaic application as an absorber layer of low-cost thin film solar cells. It has a p-type of electrical conductivity and a high abso1ption coefficient [ 1]. Single c1ystals of CZGS were grown by chemical vapor transpo1t using iodine as a transpo1t agent. The temperature dependence of the resistivity p (111) in the range 10 - 300 K An activated character of conductivity was observed in all temperature range. The conductivity in the temperature range 200 - 300 K can be attributed to nearest neighbor hopping (NNH) type conductivity and/or to hole activation from defect acceptor level to the valence band mechanism. At the lower temperatures, 100 - 200 K, the Mott variable-range hopping (VRH) conductivity [2] was observed. Analysis of the Mott - VRH conductivity yields the value of the semi - width of the acceptor band, w~ 130 meV. From the rectangular shape approximation of the density of the states for an acceptor band, the values of the relative acceptor concentration NINc~ 0.2 and the localization radius a/a_o ~ 1.2 can be obtained. The values yielded that the investigated samples of CZGS ai·e far from the metal - insulator transition.