Wide band-gap II-VI semiconductors, such as ZnSe, ZnS, ZnSSe, ZnCdS and ZnO, have wide perspectives for application in photonics, optoelectronics and spintronics, in paiticularly, as solar energy conve1ters, light emitting devices, substrates for nanoporous materials. They have wide potential to produce the sets of nanowires and nanotubes of vai·ious materials with defined values of diameter and length which depends on the conductive prope1ties of substrates [1, 2]. Thus, it is necessa1y to develop new technologies for obtaining these substrates with controlled electrical pai·aineters vai·ied in a wide range. The best results ai·e obtained for ZnSe crystals grown by physical vapor transport method and then doped by the1mal annealing in Zn+ Al melt. Specially developed the1mal profile of the furnace allows to eliminate adhesion of c1ystals to the walls of the growth chainber, to minimize their defo1mation in the post-growth cooling process, and to obtain the c1ystals free of twins and subgrain boundai·ies, with dislocation density of (l-5)·103 cm·2. Modification of Al donor concentration in the annealing medium of Zn melt allows obtaining the unifo1mly doped substrates with the area up to 3 cm2, with controlled chai·ge caiTier concentration and electrical conductivity vai·ied in the ranges of 2· 101 5 - 2· 1018 cm·3 and 1-10-2 - 20 (Q·cmr1, respectively. ZnS single c1ystals ai·e also obtained by means of physical vapor transpo1t method. The most optimal conditions for Al doping annealing allows to obtain moderately conductive substrates with charge caITier concentration of 2· 1016 cm·3 and electrical conductivity of 0.3 (Q·cmr1. For obtaining of n-ZnSxSe1_x solid solution c1ystals, the use of HCl as the chemical vapor transpo1t agent (TA) is suitable. The stablest growth conditions take place at obtaining of c1ystals with x2::0.5 composition, in which the conductivity up to 0.3 (Q-cmt1 can be reached. However, these materials as well as ZnS ai·e chai·acterized by the eno1mous surface resistance ( ~MO·mm2 for ZnS) due to the surface levels, which influence the electrical prope1ties because of the raised conduction band edge. The use of HCl as a TA is effectively for unseeded growth of n-ZnxCd1.xS crystals. Homogeneous c1ystals with composition (x) of 0-1 range, which coinciding with composition of a growth source, ai·e obtained. An effective method for increase in conductive prope1ties of the crystals is the1mal annealing in Zn+Cd vapors. The biggest achievable value of conductivity and chai·ge caITier concentration decreases at the increase in Zn content. These values varied by composition of samples are in the ranges of 1-10-2 - 102 (Q·cmr1 and 1 · 1016 - 2· 1019 cm·3, respectively. ZnO single c1ystals ai·e obtained with HCl+H2 gas mixture as a TA. Density vai·iation of loaded TA that is a source of shallow Cl donor impurity in ZnO crystals, allows obtaining the sainples with controlled charge can-ier concentration and electrical conductivity varied in the ranges of ( 4- 12)· 1017 cm·3 and 0.5-9 (Q·cmr1, respectively. Electrical prope1ties of this material is the most stable since it is demonstrated that additional annealing in the medium emiched with Zn or oxygen vapors has no strong influence on chai·ge carrier concentration.