Experimental results of strncture and prope1ties investigation of rapidly solidified temruy (Bi91 - Sn9)100-xSnx (x = 0.8 - 2.0 at. %) alloys ru·e presented. The 5alloys had foil fo1m. The foil thick was 30 - 80 µm. The cooling speed of liquid phase was equal ~ 10 K/s. The rapidly solidified foils had microcrystalline structure (figure 1), (10l2) texture and dispersive tin pa1ticles. The average size of pruticles is less 0.3 µm. There are paiticles on grain boundaty. The temperature dependences of specific electl·ical resistance p(l) and differential the1mal e.m.f. a(l) of (Bi91 - Sn9)98,8Sn1.2 foils are presented on figure 2. The specific electrical resistance of the alloy increases with temperature monotonic. The temperature dependence of differential thennal e.m.f. has maximum at 225 K. It's comsed with the appearance of the electrons in the conductive zone of the alloy. The maximum position depends on tin concentl·ation in alloy. The calculations of Peltier coefficient P were perfo1med. The dependence P(l) is chru·acterized maximum. Peltier coefficient of rapidly solidified temaiy alloys, contained 0.8, 1.2 and 2.0 at.% Sn is more absolute magnitude of bismuth Peltier coefficient in temperature intervals 150 - 225, 170 - 275 and 195 - 285 K coITespond. The obtained results indicate on possibility using of the rapidly solidified temaiy (Bi91 - Sn9)1oo-xSnx (x = 0.8 - 2.0 at. %) alloys for production p-branch of multistage thennoelectric elements.