Pb1-XMnXTe solid solutions are perspective materials for the electronic technics. On the main parameters of these crystals, from the point of view of practical application, in particular photo- and thermoelectric characteristics the greatest influence render electrically active intrinsic structural defects (vacancies) [1-3]. In present paper influence of concentration of vacancies in Pb and Te sub-lattices of crystals on galvanomagnetic and thermoelectric properties of Pb1-XMnXTe single crystals grown by the Bridgman method have been investigated. Concentration of vacancies in the crystal changed by addition of hyperstoichiometric tellurium up to 0,5 at. % and annealing of the samples in argon atmosphere at temperatures 473 and 573 K. It is established that temperature dependences of the Hall factor R and electrical conductivity σ for stoichiometric sample of Pb1-XMnXTe single crystals in 77-210 К range exhibit semiconducting character that is caused by existence in the forbidden zone acceptor levels with activation energy of 0,1 eV. Hyperstoichiometric Te atoms up to 0,01 at. % in non-annealed samples of crystals, operate, basically as acceptor centers, and at concentrations 05 at. %, mainly locating on vacancies of lead sub-lattice form anti-structural defects and reduce concentration of the holes. Annealing at 473 K is accompanied by curing of some structural defects (for example, deformation ones) and strengthening of formation of anti-structural defects, therefore signs of Hall factor R and coefficient of thermo-e.m.f. of samples below 150 K become negative. Unlike non-annealed and annealed at 473 K samples electrical conductivity of annealed at 573 K samples in all interval of temperatures possesses metal character. Thus signs of and σ are negative and Hall factor of the samples do not change almost with temperature. In these samples with growth of hyperstoichiometric tellurium content, concentration of electrons falls and Hall mobility increases. Is accepted that at annealing at 573 K, in parallel with process of placing of the part of Te atoms in vacancies of lead sub-lattice, there is also a process of transition of tellurium atoms from lattice sites in interstitial space (or volatilization of some Te atoms from the samples), i.e. formation of new vacancies in tellurium sub-lattice in crystals. It leads to increasing of electron concentration and to change of signs and R from positive to the negative. In this case with growth of hyperstoichiometric tellurium content concentration of vacancies in tellurium sub-lattice and concentration of electrons in the crystal will decrease, whereas mobility will grow that is in a good agreement with experimental results.