Quazi-amorphous PbZrTiO2 (PZT) precursor film which was deposited by RF magnetron sputtering on a platinized silicon substrate was annealed by femtosecond laser pulses at the wavelength falling into transparency band of PZT. Power was absorbed by platinum layer and the growing of perovskite phase started near it. Annealing was performed using femtosecond titanium-sapphire laser with pulse duration of 100 fs, wavelength of 800 nm, and repetition rate of 100 MHz. Beam was focused on the sample by confocal microscope. In-situ method of diagnostics was used during the process of crystallization. This method is based on second harmonic generation (SHG) by crystallized area of ferroelectric [1]. SHG intensity was measured as function of time during annealing. A range of power density was used for annealing. Annealing process is very critical to laser power and not for exposition: laser power density change by 5 % cancels perovskite formation independent on exposition time. Two shapes of annealed area were obtained: ―low‖ power density provides a circle shape of ferroelecric areas with 2 μm diameter, and ―high‖ power gives ring-type areas with no ferroelectric properties in the center (fig.). These shapes were found by scanning in SHG mode using confocal microscope after annealing. Fig. Annealed and scanned regions in SHG mode by confolal micriscope. Two shapes which depends on power density are shown. Power density of annealing - 1,5 MW/cm2 (left) and 2,2 MW/cm2 (right), annealing time 10 s for both cases. Increasing of roughness in processed areas was detected by atomic force microscopy. Crystallized regions have unidirectional polarization after annealing. Switching of polarization under electric field, i.e. switchable ferroelectricity was confirmed by piezo-force microscopy [2]. Switched region has diameter of 1 μm. Temperature distribution was estimated using COMSOL Multiphysics software with finite element method.