In the present study, monocrystalline Pb1-xSnxTe:In films (x=0.24-0.28) grown by molecular-beam epitaxy on (111)-oriented BaF2(111) substrates were examined. At helium temperatures under noillumination conditions the films had a high specific resistance; i.e. they were in the so-called «dielectric state» [1]. Electric current relaxation observed on turning-on of illumination and magnetic field was examined both in the regime of ohmic currents and under the prevalence of space-charge-limited contact injection currents. The temperature dependence of the time constant of the photocurrent relaxation process observed on turning-off of the illumination is shown in Fig. 1. The thickness of the Pb1-xSnxTe:In film was 1.4 μm, and its composition was x 0.28. Measurements were carried out in ohmic regime. It is seen that the dependence in Fig. 1 displays two distinct features at T 22.5 K and T 24.5 K. The feature at T 22.5 K looks like a 20-% jump of observed in a narrow interval of temperatures (width T 0.1 K). Simultaneously, the activation energy in the Ahhrenius dependence shows an approximately two-fold increase at this temperature, from E 0.036 eV in the temperature range T<22.5K (line 1) to E 0.068 eV in the temperature range T>22.5 K (line 2). Such a sharp change of material properties is characteristic of a ferroelectric phase transition that was earlier observed in Pb1-xSnxTe:In films of a similar composition while studying the current-voltage characteristics of samples [2] and their capacitance properties [3]. Data on the dependence of the Curie point of Pb1-xSnxTe:In on the composition of the material were summarized in [4]; those data fairly well agree with the results obtained in the present study. Estimates have showed that in the temperature range T>24.5 K the time constant of the photocurrent relaxation process was defined by the effects due to the heating of samples with radiation, with the rate of the heating in the experiments increasing with temperature. The increase of was due to the increase of the specific heat capacity of BaF2 with increasing temperature. It was found that the electric current relaxation pattern observed in the regime with contact injection of charge carriers on turning-on and turning-off of a magnetic field also displayed a radical change on increasing the temperature over T 20 K. In particular, at temperatures T>20 K a non-monotonic behavior of the magnitude of the magnetic-field-induced electric current reduction was observed. The latter could also be due to effects related with the ferroelectric phase transition. Possible mechanisms of the alteration of the relaxation patterns of illumination- and magnetic-fieldinduced current changes due to the ferroelectric phase transition in films with traps are discussed.