The dependences of the energy E of the fundamental transition in CdSe quantum dots versus parameter x = 104/a2, which depends on the quantum dot radius a, are analyzed and compared on the basis of the published experimental data [1-5]. The experimental results obtained by the same research team at 10 K presented in [1,2] lead to substantially different dependences E1(x) and E2(x), respectively (see Fig. 1). It is easy to see that the curve E2(x/4) shifted along the vertical line for a certain distance with high accuracy coincides with the curve E1(x). This coincidence suggests that though everywhere in [2] the concept of quantum dot radius a is used, the dot‘s diameter d 2a is actually assumed. The fact that the measurements performed in [3] at 300 K lead to the E3(x) dependence, which coincides with the E1(x) dependence shifted upward by 90 meV, confirms that the E1(x) curve is correct. The forbidden gap of CdSe bulk crystals amounts to 1.84 eV for 10 K and 1.75 eV for 300 K. Therefore, the equation E3(x) – 1.84 eV ≈ E1(x) – 1.75 eV shows that it is possible to extrapolate the spectroscopic results obtained at a certain temperature to the case of other temperature values simply by taking into consideration the temperature dependence of the forbidden gap of the bulk semiconductor. The dependences of the fundamental transition energy in CdSe quantum dots versus their size at 300 K (Fig. 2) can be obtained form the results also published in [4,5]. The first one leads to the curve E4(x) located above E3(x), the second is presented by the curve E5(x) located below E3(x). The curves E4(x) – 50 meV and E5(1:3x) + 50 meV nearly coincide and are close to the curve E1(x). The divergence of the results published in [4] and [5] appears, probably, since the quantum dot radius in [5] by a factor of 0.9 differs from the value assumed by the authors.