Structural and optical characterizations of Cu2ZnGeXSn1-X(S,Se)4 compounds
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GARCIA-LLAMAS, E., CABALLERO, Raquel, VICTOROV, Ivan, NIKORICH, Andrey V., BODNAR, Ivan V., ARUSHANOV, Ernest, LEON, Maximo, MERINO, Jose Manuel. Structural and optical characterizations of Cu2ZnGeXSn1-X(S,Se)4 compounds. In: Materials Science and Condensed Matter Physics, Ed. 7, 16-19 septembrie 2014, Chișinău. Chișinău, Republica Moldova: Institutul de Fizică Aplicată, 2014, Editia 7, p. 34.
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Materials Science and Condensed Matter Physics
Editia 7, 2014
Conferința "Materials Science and Condensed Matter Physics"
7, Chișinău, Moldova, 16-19 septembrie 2014

Structural and optical characterizations of Cu2ZnGeXSn1-X(S,Se)4 compounds


Pag. 34-34

Garcia-Llamas E.1, Caballero Raquel1, Victorov Ivan2, Nikorich Andrey V.3, Bodnar Ivan V.2, Arushanov Ernest3, Leon Maximo1, Merino Jose Manuel1
 
1 Universidad Autónoma de Madrid,
2 Joint Institute of Physics of Solids & Semiconductors of the National Academy of Sciences of Belarus,
3 Institute of Applied Physics, Academy of Sciences of Moldova
 
Disponibil în IBN: 22 februarie 2019


Rezumat

Cu2-Zn-IV-VI4 (IV=Ge,Sn; VI=S,Se) solid solutions of quaternary semiconductor compounds have attracted a wide interest for their application as solar-cell absorbers and other potential optical applications. Among them, Cu2ZnSn(S,Se)4 solutions are composed of naturally abundant constituents and are environmentally friendly thin film absorbers, which have shown conversion efficiencies as high as 12.6% [1]. It has also been shown that the sulphide and selenide quaternary Sn-compounds crystalize in the kesterite structure (I4), both showing a certain disorder between the Cu and Zn sites [2,3], while their Ge-analogs appear to occur both in the stannite structure (I42m) or a wurtzite-derived structure (Pmn21) [2,4,5]. Several works on band structure calculations have been recently performed assuming different crystalline structures for these compounds and deriving in different band gap values [4,6]. In this work, we will present several results from different characterization techniques, mainly structural (XRD) and optical (ellipsometry), carried out on quaternary and pentenary Cu2ZnGeXSn1-XSe4 and Cu2ZnGeXSn1-XS4 (X = 0.0, 0.3, 0.5, 0.7, 1.0) compounds. The growing methods included chemical vapour transport, resulting in single crystalline materials, and growth from the melt starting from pure elements, either in the presence of Sn-solvent or not, resulting in polycrystalline materials. All samples undergone subsequent annealings to improve homogeneity and crystallinity and their compositions were verified by EDX. The different results will be correlated to help in the understanding of the relationship between the structural and optoelectronic properties in these materials. In adition, the posibility of adjusting the optical band-gap energy of the absorber layer through the content of the constituent elements is critical for optimizing the performance of photovoltaic devices, which could also be relevant for an efficiency improvement of CZTGeSSe-based solar cells.