Indium antimonide doped with Mn, In1_xMnxSb, belongs to the group III-V diluted magnetic semiconductors and attracts a special attention for possible utilization in spintronics [1]. The reason is connected mainly to the prototypic compound, InSb, collecting the nanowest band gap, the highest caiTier mobility and the strongest spin-orbit coupling among the III-V semiconductors. Polyc1ystalline In1_xMnxSb samples with x = 0.005-0.06 were obtained by direct alloying of InSb, Mn and Sb, followed by a fast cooling of the melt at a rate of 10-12 K./s. Stmctural investigations gave evidence for the presence of substitutional Mn ions fonning the In1_xMnxSb matrix, as well as microc1ystalline MnSb inclusions (precipitates) with the size of~ 100-600 nm embedded into the matrix above. Investigations of the temperature dependence of the magnetization, M (T), have been perfonned with a SQUID magnetometer separately between T= 5 - 310 K and T= 260 -580 K, respectively, in magnetic fields B up to 5 T. Their analysis yields three different magnetic units: (i) the substitutional Mn ions making the pai·amagnetic contribution below ~ 10-20 K, (ii) the Mn.As nanoprecipitates governing the fenomagnetic (FM) prope1iies of the material up to 580 K, and (iii) the atomic-size Mn complexes (dimers) responsible for the superparamagnetic contribution to M (T) in the inte1mediate temperature range. The concentrations of the each type of magnetic inclusions above have been dete1mined. Single Mn ions substituting In range within the interval of (2 - 9)x1019 cm-3, the concentration of the Mn dimers lies between (8 - 30)x1019 cm-3 and the volume fraction of the MnSb phase vai·ies between 0.25 and 3.5 %. Transpo1i prope1iies of In1_xMnxSb have been investigated on the same samples as those utilized in the magnetization measurements, using the standai·d six-probe geometry, between T = l .6 - 300 K in pulsed magnetic fields B up to 15 T. The resistivity, p (T), of all investigated samples exhibits at B = 0 a shallow maximum or inflection below ~ 10 K, connected to the FM transition in the system of substitutional Mn ions. In addition, p (T) displays an upturn with lowering the temperature below T ~ l 0 - 20 K, attr·ibutable to the Kondo effect. The universal Kondo behavior is observed both above and below the FM tr·ansition temperature. The Hall resistivity, PH, has a non-linear dependence on B up to the room temperature, demonstr·ating an anomalous contr·ibution due to the effect of the MnSb nanoinclusions. The magnetoresistance, !). p (B)/ p (0), is positive above T ~ l 0 K and is negative at lower temperatures. The Hall effect and the positive magnetoresistance are inte1preted simultaneously with the two-band model, taking into account the light and heavy holes of the InSb structure with quite different concentrations and mobilities. The magnetic field and temperature dependences of the negative magnetoresistance follows those predicted by the Khosla­Fischer model, taking into account suppression of the spin-dependent scatte1ing of charge caiTiers