Preparation of an intermediate layer between ITO AND Si in ITO/n-Si based solar cells
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SIMASHKEVICH, Aleksey, BRUC, Leonid, CURMEI, Nicolai, SHERBAN, Dormidont, RUSU, Marin, THOGERSEN, Annett, ULYASHIN, Alexander G.. Preparation of an intermediate layer between ITO AND Si in ITO/n-Si based solar cells. In: Materials Science and Condensed Matter Physics, Ed. 9, 25-28 septembrie 2018, Chișinău. Chișinău, Republica Moldova: Institutul de Fizică Aplicată, 2018, Ediția 9, p. 326.
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Materials Science and Condensed Matter Physics
Ediția 9, 2018
Conferința "International Conference on Materials Science and Condensed Matter Physics"
9, Chișinău, Moldova, 25-28 septembrie 2018

Preparation of an intermediate layer between ITO AND Si in ITO/n-Si based solar cells

CZU: 538.9+621.383.51+66

Pag. 326-326

Simashkevich Aleksey1, Bruc Leonid1, Curmei Nicolai1, Sherban Dormidont1, Rusu Marin2, Thogersen Annett3, Ulyashin Alexander G.3
 
1 Institute of Applied Physics,
2 Helmholtz Zentrum Berlin,
3 Sintef- Stiftelsen For Industriell Og Teknisk Forskning Ved Norges Tekniske Hogskole
 
Proiecte:
 
Disponibil în IBN: 15 februarie 2019


Rezumat

The goal of this work is to demonstrate that heterojunction ITO/Si based solar cells fabricated by non-vacuum spray pyrolysis technique for deposition of ITO layers, can be considered as a promising approach for the cost effective processing of ITO/n-type Si based solar cells. It is established that preparation of an intermediate layer between ITO and Si is a crucial step, which determines efficiency of ITO/Si based solar cells [1, 2]. Two approaches for the formation of such buffer layers have been considered: (i) chemical etching, which results in a formation of a thin Si porous layer and (ii) low- temperature (~400oC) anneals, which result in a formation of a thin SiOx layer. High resolution electron microscopy has been used for the analysis of individual ITO layers as well as ITO/Si interfaces.  As an example shows TEM image of ITO/Si interface for solar cell structure, in which Si substrate has been chemically etched prior deposition of the ITO layer. It can be seen that a spongy like interface layer between ITO and Si substrate with thickness about 50 nm is formed after chemical etching of Si prior deposition of ITO.  Shows that after annealing of Si at 400 oC a thin (~1 nm) SiOx layer between ITO and Si substrate is formed. Efficiency of heterojunction of ITO/Si structure in this case is higher than that for the case when Si substrate was subjected to the chemical etching (see Table 1). It can be concluded that that formation of an ultra-thin SiOx layer at the ITO/Si interface is the most promising route to fabricate heterojunction ITO/Si solar cells with the reasonable (above 14%) efficiencies at a low-cost.  General technological trends, which lead to an improvement of the conversion efficiency of ITO/Si solar cells, as well as further steps for optimization and improvement of the low-cost processing routes for ITO/Si solar cells will be discussed.