Zinc oxide (ZnO) has attracted interest as a material for ultraviolet and blue light emitting device due to its wide band gap of 3.37 eV and large exciton-binding energy of 60 meV. ZnO is known as a transparent material with excellent dielectric and piezoelectric properties. ZnO films have potential applications in semiconductor lighting, piezoelectric transducers, gas sensors, and photoconductive devices. Magnetron sputtering is one of the simplest methods of obtaining ZnO films with controllable electrical parameters and impurity composition. However, efficiency of this method is based on highly conductive targets with controllable composition.  Present investigation is devoted to technology of obtaining ZnO targets by sintering of ZnO powder in various gaseous media. ZnO targets have been obtained in the preliminary evacuated sealed quartz ampoules, by annealing in ZnCl2 vapors, HCl, HCl+H2, HCl+C and HCl+H2+C. Several experiments have been carried out in air and CO atmosphere. The advantage of gaseous media containing halogens and suppressing of the attachment effect of targets to quartz ampoule walls were demonstrated. The influence of annealing temperature (varied in the 930-1060^oC), of duration of annealing (up to 3 days), of HCl pressure (varied in the 0-4 atm range), of ZnO granule size (varied in the 200-1000 μm range) and of preliminary annealing of material, on the conductivity of targets, on their hardness and on the post-annealing deformation during cooling, have been investigated. The thermodynamic analysis for composition of ZnO+HCl/H2/C systems was carried out for wide temperature range and for various loaded HCl pressures. The increase of conductivity of ZnO targets, caused by shallow Cl donors and excess of Zn, was predicted theoretically; these results were compared with experimental data. The annealing conditions favorable for the obtaining ZnO:Cl targets with a diameter of at least 26 mm and conductivity of as high as 1 (Ω.сm)^-1 were found (Fig. 1).  Features of obtaining ZnO films using ZnO:Cl targets and characterization of grown films are shown. Promising perspectives of proposed sintering method for obtaining ZnO targets doped by various metals are analyzed.