Radiative properties of ZnSe:Sb single crystals
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SUSHKEVICH, Konstantin, GONCEARENCO, Evghenii, NEDEOGLO, Natalia, NEDEOGLO, Dumitru. Radiative properties of ZnSe:Sb single crystals. In: Materials Science and Condensed Matter Physics, Ed. 9, 25-28 septembrie 2018, Chișinău. Chișinău, Republica Moldova: Institutul de Fizică Aplicată, 2018, Ediția 9, p. 176.
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Materials Science and Condensed Matter Physics
Ediția 9, 2018
Conferința "International Conference on Materials Science and Condensed Matter Physics"
9, Chișinău, Moldova, 25-28 septembrie 2018

Radiative properties of ZnSe:Sb single crystals

CZU: 535.37+539.2+548.3

Pag. 176-176

Sushkevich Konstantin, Goncearenco Evghenii, Nedeoglo Natalia, Nedeoglo Dumitru
 
Moldova State University
 
Disponibil în IBN: 6 februarie 2019


Rezumat

Radiative properties of ZnSe:Sb samples are investigated in a series of papers [1-3]. The conclusions made in the papers about the influence of Sb impurity on the sample properties essentially differ. In some measure, these disagreements are due to the fact that the investigated samples were grown by various methods and measured in various spectral ranges at various temperatures.  We report on photoluminescence (PL) spectra of ZnSe and ZnSe:0.1 at% Sb grown by CVT method with iodine as a transport agent and doped with Sb impurity during the growth. PL spectra were measured in the wavelength range between 400 and 800 nm at temperatures between 90 and 300 K under excitation with laser radiation of 337 and 473 nm. The most interesting is the influence of Sb impurity on the PL spectra between 500 and 750 nm at T=300 K. According to literature data, emission of the undoped sample in this wavelength range (Fig. 1, curves 1, 1*) is attributed to VZn, AlZn, MnZn, CuZn, and ISe defects. Introduction of Sb impurity into ZnSe samples induces the appearance of a new PL band with maximum at 575 nm (Fig. 1, curves 2, 2*). It may be supposed that this PL band is attributed to the (SbSeISe) associative centre, which forms the acceptor level located at ~ 0.52 eV above the valence band top. The process of its formation may be illustrated by the energy-level diagram shown in Fig. 2. At indirect excitation of (SbSeISe) luminescence centre (Fig. 2a), after generation of non-equilibrium electron-hole pairs, the Sb-based acceptor centre captures a valence hole, which recombines afterwards with a non-equilibrium electron thermalized in the conduction band. As a result, a corresponding light quantum is radiated. At direct excitation of the luminescence centre (Fig. 2b), excitation radiation with photon energy below the band-gap energy brings an electron from the (SbSeISe) acceptor centre deeply to the conduction band. Then, after thermalization to the conduction band bottom, the electron recombines with a non-equilibrium hole localized at the associative centre. As a result, a corresponding light quantum is radiated. Temperature evolution of this new PL band is also analyzed in our report.