Zinc germanium oxynitride − chemical variability in wurtzite-type semiconductors
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BRETERNITZ, Joachim, SCHORR, S.. Zinc germanium oxynitride − chemical variability in wurtzite-type semiconductors. In: Materials Science and Condensed Matter Physics, Ed. 9, 25-28 septembrie 2018, Chișinău. Chișinău, Republica Moldova: Institutul de Fizică Aplicată, 2018, Ediția 9, p. 105.
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Materials Science and Condensed Matter Physics
Ediția 9, 2018
Conferința "International Conference on Materials Science and Condensed Matter Physics"
9, Chișinău, Moldova, 25-28 septembrie 2018

Zinc germanium oxynitride − chemical variability in wurtzite-type semiconductors

CZU: 537.311.322+544

Pag. 105-105

Breternitz Joachim, Schorr S.
 
Helmholtz-Centre Berlin for Materials and Energy
 
Disponibil în IBN: 17 ianuarie 2019


Rezumat

ZnMN2 (M = Si, Ge, Sn) compounds have attracted some attention as potential earth-abundant and low-toxic alternatives to III-V solar absorber materials.[1] As previously described for ZnGeN2,[2] cation ordering in the ternary compound leads to a symmetry lowering from the wurtzite-type aristotype structure into a cation-ordered structure in Pna21.  In the aim to thoroughly understand the effect of oxygen inclusion on the structural features of those materials related to a number of synthesis conditions, we worked on the quaternary oxynitride system Zn1+xGe1-xO2xN2-2x (0 ≤ x ≤ 1), where some of the nitrogen is replaced by oxygen. The O2-/N3-charge difference is accounted for by an increase of the Zn2+/Ge4+ ratio. While the inclusion of oxygen adds a further degree of chemical complexity, the crystal structure does not appear to reflect this. Instead, the oxynitrides adopt a wurtzite-type structure with disorder on both cation and anion sites, which is not only the aristotype of the nitridic end member ZnGeN2, but also the structure of the oxydic end member ZnO.  We will link our structural work with optical and chemical characterisation in order to thoroughly understand this metastable system that is, with a bandgap of Eg ≈ 2.5 eV, potentially suitable for wide-bandgap applications, such as water splitting reactions.[3].