| Conţinutul numărului revistei |
| Articolul precedent |
| Articolul urmator |
 722 0 |
 SM ISO690:2012SIRKELI, Vadim, YILMAZOGLU, Oktay, ONG, Duu Sheng, PREU, Sascha, KUPPERS, Franko, HARTNAGEL, Hans Ludwig. Resonant Tunneling and Quantum Cascading for Optimum Room-Temperature Generation of THz Signals. In: IEEE Transactions on Electron Devices, 2017, nr. 8(64), pp. 3482-3488. ISSN -. DOI: https://doi.org/10.1109/TED.2017.2718541 |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
| IEEE Transactions on Electron Devices | ||||||
| Numărul 8(64) / 2017 / ISSN - /ISSNe 0018-9383 | ||||||
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| DOI:https://doi.org/10.1109/TED.2017.2718541 | ||||||
| Pag. 3482-3488 | ||||||
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| Rezumat | ||||||
We report on the results of a numerical study of quantum transport in ZnSe-based resonant-tunneling diodes (RTDs) and quantum cascade oscillators (QCOs) with fixed and unequal barrier heights. It is found that the negative differential resistance exists up to room temperature in the current-voltage characteristics of the RTD and QCO devices with unequal barrier heights. Further, we demonstrate that QCOs with unequal barrier heights have a better frequency and power performance characteristics compared with RTDs and are more beneficial for high-power terahertz generation at room temperature. For the best QCO device with 100 periods of quantum cascading, a maximum output power of 7-9 μW for the operating frequency range from 0.1 to 6 THz at room temperature was achieved. |
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| Cuvinte-cheie Alloy, BeSeMg, Sequantum well devicesresonant tunneling devicessemiconductor devicesterahertz (THz) radiation, ZnBeSe, ZnMgSe, ZnSe |
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