Optical and Photoelectric Properties of Nanolamellar Structures Obtained by Thermal Annealing of InSe Plates in Zn Vapours
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2018-10-19 14:33
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UNTILA, Dumitru; EVTODIEV, Igor; CARAMAN, Iuliana; SPALATU, Nicolae; DMITROGLO, Liliana; CARAMAN, Mihail. Optical and Photoelectric Properties of Nanolamellar Structures Obtained by Thermal Annealing of InSe Plates in Zn Vapours. In: Physica Status Solidi (A) Applications and Materials Science. 2018, nr. 4(215), p. 0. ISSN 1862-6300.
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Physica Status Solidi (A) Applications and Materials Science
Numărul 4(215) / 2018 / ISSN 1862-6300

Optical and Photoelectric Properties of Nanolamellar Structures Obtained by Thermal Annealing of InSe Plates in Zn Vapours


DOI: 10.1002/pssa.201700434
Pag. 0-0

Untila Dumitru12, Evtodiev Igor12, Caraman Iuliana3, Spalatu Nicolae4, Dmitroglo Liliana1, Caraman Mihail1
 
1 State University of Moldova,
2 Ghitu Institute of Electronic Engineering and Nanotechnology of the Academy of Sciences of Moldova,
3 Universitatea din Bacău,
4 Tallinn University of Technology
 
Disponibil în IBN: 10 mai 2018


Rezumat

The structural, optical and photoelectric properties of InSe crystals grown by Bridgman–Stockbarger method and ZnSe/InSe structures obtained on InSe by thermal annealing in Zn vapours are studied in this paper. The study of structural properties confirms that ZnSe compound is formed. The analysis of photoelectric properties reveal that both the ZnSe-InSe composite layer and the composite/InSe heterojunction are photosensitive in the VIS-NIR spectral region.

Cuvinte-cheie
InSe, optical properties, photoelectric properties,

Thermal annealing, Zn vapours