|Conţinutul numărului revistei|
|Ultima descărcare din IBN:|
| SM ISO690:2012|
IVANOVA, Galina; NEDEOGLO, Dumitru; NEGEOGLO, N.; SIRKELI, Vadim; TIGHINEANU, Ion; URSAKI, Veacheslav. Interaction of intrinsic defects with impurities in AI doped ZnSe single crystals. In: Journal of Applied Physics. 2007, nr. 6(101), p. 0. ISSN 0021-8979.
|Journal of Applied Physics|
|Numărul 6(101) / 2007 / ISSN 0021-8979|
We report on the results of a complex study of electrical (77-300 K) and luminescence (10-300 K) properties of n-ZnSe single crystals annealed in a Zn melt containing Al impurity at concentrations ranging from 0.1 to 80 at. %. It was established that Al atoms form donor centers only at a low impurity concentration (≤0.5 at. %). The increase of the amount of Al atoms in the crystal results in the formation of (VZnAlZn) associative acceptor centers leading to the self-compensation of the shallow Al donor impurity. This process is accompanied by the emergence and development of a self-activated luminescence band associated with the (VZnAl Zn) acceptor centers. We show that further increase of the Al content in the melt (≥ 10 at. %) leads to the dissociation of the acceptor complexes and to a recurrent donor doping effect. The photoluminescence spectra of such crystals are dominated by activated luminescence via the (CuznV seCui) and (CuZnAlZn) associative centers.
aluminum, Luminescence, Photoluminescence spectroscopy,
Crystal impurities, Doping (additives), Zinc compounds