Interaction of intrinsic defects with impurities in AI doped ZnSe single crystals
Închide
Conţinutul numărului revistei
Articolul precedent
Articolul urmator
121 1
Ultima descărcare din IBN:
2018-07-27 20:56
SM ISO690:2012
IVANOVA, Galina; NEDEOGLO, Dumitru; NEGEOGLO, N.; SIRKELI, Vadim; TIGINYANU, Ion; URSAKI, Veacheslav. Interaction of intrinsic defects with impurities in AI doped ZnSe single crystals. In: Journal of Applied Physics. 2007, nr. 6(101), p. 0. ISSN 0021-8979.
EXPORT metadate:
Google Scholar
Crossref
CERIF
BibTeX
DataCite
Dublin Core
Journal of Applied Physics
Numărul 6(101) / 2007 / ISSN 0021-8979

Interaction of intrinsic defects with impurities in AI doped ZnSe single crystals


DOI: 10.1063/1.2712147
Pag. 0-0

Ivanova Galina1, Nedeoglo Dumitru1, Negeoglo N.1, Sirkeli Vadim1, Tiginyanu Ion2, Ursaki Veacheslav2
 
1 State University of Moldova,
2 Institute of Applied Physics, Academy of Sciences of Moldova
 
Disponibil în IBN: 11 aprilie 2018


Rezumat

We report on the results of a complex study of electrical (77-300 K) and luminescence (10-300 K) properties of n-ZnSe single crystals annealed in a Zn melt containing Al impurity at concentrations ranging from 0.1 to 80 at. %. It was established that Al atoms form donor centers only at a low impurity concentration (≤0.5 at. %). The increase of the amount of Al atoms in the crystal results in the formation of (VZnAlZn) associative acceptor centers leading to the self-compensation of the shallow Al donor impurity. This process is accompanied by the emergence and development of a self-activated luminescence band associated with the (VZnAl Zn) acceptor centers. We show that further increase of the Al content in the melt (≥ 10 at. %) leads to the dissociation of the acceptor complexes and to a recurrent donor doping effect. The photoluminescence spectra of such crystals are dominated by activated luminescence via the (CuznV seCui) and (CuZnAlZn) associative centers.

Cuvinte-cheie
aluminum, Luminescence, Photoluminescence spectroscopy,

Crystal impurities, Doping (additives), Zinc compounds