Analytical Drain Current Model of 1-D Ballistic Schottky-Barrier Transistors
Închide
Conţinutul numărului revistei
Articolul precedent
Articolul urmator
620 0
SM ISO690:2012
BEJENARI, Igor, SCHROTER, Michael, CLAUS, Martin. Analytical Drain Current Model of 1-D Ballistic Schottky-Barrier Transistors. In: IEEE Transactions on Electron Devices, 2017, nr. 9(64), pp. 3904-3911. ISSN -. DOI: https://doi.org/10.1109/TED.2017.2721540
EXPORT metadate:
Google Scholar
Crossref
CERIF

DataCite
Dublin Core
IEEE Transactions on Electron Devices
Numărul 9(64) / 2017 / ISSN - /ISSNe 0018-9383

Analytical Drain Current Model of 1-D Ballistic Schottky-Barrier Transistors

DOI: https://doi.org/10.1109/TED.2017.2721540

Pag. 3904-3911

Bejenari Igor12, Schroter Michael2, Claus Martin2
 
1 Institute of the Electronic Engineering and Nanotechnologies "D. Ghitu" of the Academy of Sciences of Moldova,
2 Technische Universitat Dresden, Dresden
 
Disponibil în IBN: 9 februarie 2018


Rezumat

A new analytical model based on the Wentzel-Kramers-Brillouin approximation for MOSFET-like 1-D ballistic transistors with Schottky-Barrier contacts has been developed for the drain current. By using a proper approximation of both the Fermi-Dirac distribution function and transmission probability, an analytical solution for the Landauer integral was obtained, which overcomes the limitations of existing models and extends their applicability toward high bias voltages needed for analog applications. The simulations of transfer and output characteristics are found to be in agreement with the experimental data for sub-10-nm carbon-nanotube FETs.

Cuvinte-cheie
Analytical transport model, carbon-nanotube FET (CNTFET), tunneling,

Schottky barrier (SB), Wentzel-Kramers-Brillouin (WKB) approximation