Growth of ZnCdS single crystals and prospects of their application as nanoporous structures
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KOLIBABA, Gleb, MONAICO, Eduard, GONCEARENCO, Evghenii, NEDEOGLO, Dumitru, TIGINYANU, Ion, NIELSCH, Kornelius. Growth of ZnCdS single crystals and prospects of their application as nanoporous structures. In: Semiconductor Science and Technology, 2014, vol. 29, p. 0. ISSN 0268-1242. DOI: https://doi.org/10.1088/0268-1242/29/12/125003
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Semiconductor Science and Technology
Volumul 29 / 2014 / ISSN 0268-1242

Growth of ZnCdS single crystals and prospects of their application as nanoporous structures

DOI:https://doi.org/10.1088/0268-1242/29/12/125003

Pag. 0-0

Kolibaba Gleb1, Monaico Eduard23, Goncearenco Evghenii1, Nedeoglo Dumitru1, Tiginyanu Ion3, Nielsch Kornelius2
 
1 Moldova State University,
2 University of Hamburg,
3 Technical University of Moldova
 
 
Disponibil în IBN: 21 decembrie 2017


Rezumat

Substrates of wide band-gap II-VI semiconductor compounds are considered feasible for the fabrication of nanoporous matrices (NM) needed for templated growth of nanowires and nanotubes of solid-state materials promising for applications in various fields. An accessible and cost-effective approach to fabricate NM is based on electrochemical etching (ECE) which, however, depends on the electrical conductivity of the substrates. In this paper, growth of homogeneous ZnxCd1-xS single crystals, with x varying from 0 to 1, is demonstrated and the influence of chemical composition on optical and electrical properties of the crystals is identified. The feasibility of using ZnxCd1-xS alloys with x = 0-0.6 for the growth of nanopore arrays with pore diameter down to 30 nm is shown. The perspectives and limitations of the use of these semiconductor alloys for the fabrication of NM by means of ECE are discussed.

Cuvinte-cheie
Anodic etching, Crystal growth, Nanoporous structures, Nanotemplates, Semiconductor substrates, ZnCdS solid solutions