Комбинационное рассеяние света в полупроводниковых проволоках
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ESHPULATOV, B., АРЗИКУЛОВ, Э., KHUZHANOVA, D.. Комбинационное рассеяние света в полупроводниковых проволоках . In: Электронная обработка материалов, 2010, nr. 1(46), pp. 90-96. ISSN 0013-5739.
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Электронная обработка материалов
Numărul 1(46) / 2010 / ISSN 0013-5739 /ISSNe 2345-1718

Комбинационное рассеяние света в полупроводниковых проволоках

Pag. 90-96

Eshpulatov B.1, Арзикулов Э.2, Khuzhanova D.2
 
1 Samarkand Branch of the Tashkent University of Information Technologies,
2 Самаркандский государственный университет
 
 
Disponibil în IBN: 31 martie 2017


Rezumat

Raman scattering differential cross section for a semiconductor quantum wires have been calculated. Considering interband transitions between the size quantized subbands. Existing the electron-hole pairs in the transient states belonging to subbands of conduction and valence bands are predicted. Photon frequency dependence of the cross section for excited and scattered radiation is analyzed for arbitrary polarization of secondary radiation. Singularities of the scattered radiation differential cross section are predicted.