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 SM ISO690:2012MADATOV, R., НАДЖАФОВ, А., TAGIEV, T., GAZANFAROV, M.. Механизм токопрохождения в монокристаллах TlInSe2 при сильных электрических полях. In: Электронная обработка материалов, 2010, nr. 5(46), pp. 115-119. ISSN 0013-5739. |
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 Электронная обработка материалов |
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| Numărul 5(46) / 2010 / ISSN 0013-5739 /ISSNe 2345-1718 | ||||||
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| Pag. 115-119 | ||||||
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The temperature dependence of TlInSе2 monocrystal’s volt-ampere characteristics, photoconductivity and electroconductivity has been studied. It has been established that the current flow mechanism in TlInS2 monocrystal with a tetragonal modification is connected with the space charges at E<102V/cm fields and the field effects at E >102V/cm values of the field. It has been shown that the photocurrent switches off at 180 K temperature at the expense of recharging of r-centers when TlInS2 monocrystal is illuminated by white light. |
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