The technology of step-by-step low-temperature diffusion of gadolinium in silicon, which allows to create nanoclusters of impurity atoms with significant magnetic moments distributed throughout the volume of material has been developed. It is shown that in contrast to the samples obtained by high temperature doping the samples obtained by the new technology do not have surface erosion, formation of allows and silicides of the surface region. Nanoclusters of impurity atoms of gadolinium in the volume of the crystal lattice of silicon were studied using an infrared microscope MIC-5. It was determined that during the step-bystep low-temperature diffusion process the temperature and diffusion time affect not only the depth of penetration of impurities, but also on the dimensions of the emerging clusters, and may cause them not to form. Studies of the effect of low-temperature treatments on the size and distribution of the clusters showed that at annealing in the temperature range 500−700 °C the ordering of clusters of impurity atoms of gadolinium. Was observed further increase of annealing temperature leads to the destruction of gadolinium impurity clusters in the silicon bulk.