Optical bias effect on transient photocurrent in amorphous As2Se3: Sn films
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YOVU, M., KOLOMEYKO, Eduard, VASILIEV, Ion, HAREA, Diana. Optical bias effect on transient photocurrent in amorphous As2Se3: Sn films. In: Moldavian Journal of the Physical Sciences, 2005, nr. 3(4), pp. 332-341. ISSN 1810-648X.
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Moldavian Journal of the Physical Sciences
Numărul 3(4) / 2005 / ISSN 1810-648X /ISSNe 2537-6365

Optical bias effect on transient photocurrent in amorphous As2Se3: Sn films


Pag. 332-341

Yovu M., Kolomeyko Eduard, Vasiliev Ion, Harea Diana
 
Institute of Applied Physics, Academy of Sciences of Moldova
 
Disponibil în IBN: 16 decembrie 2013


Rezumat

Optical bias effect on transient photocurrent of As2Se3: Snx (x=0¸1.0 at.%) amorphous films, excited by a monochromatic light pulse with long-wavelength of 0.63 mm was investigated. The relaxation of the photocurrent has been recorded in the wide time interval (from 0.05 up to 25 s) and was determined by capture on the deep acceptor-like traps. In a non-doped sample of a-As2Se3 the relaxation of the photocurrent weakly depends on a level of optical bias. For the samples with tin impurity, even the low levels of optical bias result in sharp reduction of the photocurrent. The experimental results are discussed in frame of the model of recombination controlled by capture on deep states.