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 SM ISO690:2012BEJENARI, Igor, SCHROTER, Michael, CLAUS, Martin. Analytical drain current model for non-ballistic Schottky-Barrier CNTFETs. In: European Solid-State Device Research Conference, Ed. 47, 11-14 septembrie 2017, Leuven. Court Saint Etienne, Belgia: Editions Frontieres, 2017, Ediția a 47-a, pp. 90-93. ISBN 978-150905978-2. ISSN 19308876. DOI: https://doi.org/10.1109/ESSDERC.2017.8066599 |
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 European Solid-State Device Research Conference Ediția a 47-a, 2017 |
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Conferința "European Solid-State Device Research Conference" 47, Leuven, Belgia, 11-14 septembrie 2017 | |
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| DOI:https://doi.org/10.1109/ESSDERC.2017.8066599 | |
| Pag. 90-93 | |
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| Rezumat | |
A new analytical static drain current model based on the WKB approximation has been developed for Schottky-Barrier CNTFETs. Electron scattering by acoustic and optical phonons in the channel has been taken into account. By using a simple approximation of both the Fermi-Dirac distribution function and transmission probability, an analytical expression for the drain current in the Landauer-Büttiker formalism has been obtained. This allows to overcome the limitations of existing models and to extend their applicability toward high bias voltages as needed for analog applications. The model results agree well with experimental data. |
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| Cuvinte-cheie Distribution functions, Electron scattering, Probability distributions, Schottky barrier diodes, Solid state devices |
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